{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,21]],"date-time":"2026-02-21T02:21:58Z","timestamp":1771640518596,"version":"3.50.1"},"reference-count":12,"publisher":"AIP Publishing","issue":"20","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2007,11,12]]},"abstract":"<jats:p>Large negative magnetoresistance is found in Ge films, used as ultralow-temperature resistance thermometers, at temperatures below 0.2K and magnetic fields below 1T. This effect is very sensitive to temperature. At T&amp;lt;0.3K, the magnetoresistance is negative, and its magnitude increases with decreasing temperature. At 0.03K, the resistance strongly decreases (up to 100 times) when the magnetic field is increased from 0to1T and then saturates in higher fields. We discuss the mechanisms of this phenomenon and present results of calculations involving the hopping theory of conductivity with localization corrections.<\/jats:p>","DOI":"10.1063\/1.2813615","type":"journal-article","created":{"date-parts":[[2007,11,14]],"date-time":"2007-11-14T23:19:44Z","timestamp":1195082384000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":13,"title":["Large negative magnetoresistance in Ge films at ultralow temperatures and low magnetic fields"],"prefix":"10.1063","volume":"91","author":[{"given":"V. F.","family":"Mitin","sequence":"first","affiliation":[{"name":"V. Lashkarev Institute of Semiconductor Physics , NASU and \u201cMicroSensor,\u201d 252650 Kiev, Ukraine"}]},{"given":"V. K.","family":"Dugaev","sequence":"additional","affiliation":[{"name":"Rzesz\u00f3w University of Technology Department of Mathematics and Applied Physics, , 35-959 Rzesz\u00f3w, Poland"}]},{"given":"G. G.","family":"Ihas","sequence":"additional","affiliation":[{"name":"University of Florida , Gainesville, Florida 32611, USA"}]}],"member":"317","published-online":{"date-parts":[[2007,11,14]]},"reference":[{"key":"2023070216251377700_c1a","first-page":"1996","volume":"284\u2013288","year":"2000","journal-title":"Physica B"},{"key":"2023070216251377700_c1b","doi-asserted-by":"crossref","first-page":"1472","DOI":"10.1063\/1.2355259","volume":"850","year":"2006","journal-title":"AIP Conf. Proc."},{"key":"2023070216251377700_c2","doi-asserted-by":"crossref","first-page":"617","DOI":"10.1016\/S0026-2692(96)00103-6","volume":"28","year":"1997","journal-title":"Microelectron. J."},{"key":"2023070216251377700_c3","doi-asserted-by":"crossref","first-page":"474","DOI":"10.1016\/j.cryogenics.2007.04.014","volume":"47","year":"2007","journal-title":"Cryogenics"},{"key":"2023070216251377700_c4","doi-asserted-by":"crossref","first-page":"191","DOI":"10.1016\/S0924-4247(01)00562-3","volume":"92","year":"2001","journal-title":"Sens. Actuators, A"},{"key":"2023070216251377700_c5","doi-asserted-by":"publisher","first-page":"2612","DOI":"10.1103\/PhysRevB.4.2612","volume":"4","year":"1971","journal-title":"Phys. Rev. B"},{"key":"2023070216251377700_c6","doi-asserted-by":"publisher","first-page":"L49","DOI":"10.1088\/0022-3719\/8\/4\/003","volume":"8","year":"1975","journal-title":"J. Phys. C"},{"key":"2023070216251377700_c7a","first-page":"1","volume-title":"Electron-Electron Interactions in Disordered Systems","author":"Efros","year":"1985"},{"key":"2023070216251377700_c7b","doi-asserted-by":"publisher","first-page":"287","DOI":"10.1103\/RevModPhys.57.287","volume":"57","year":"1985","journal-title":"Rev. Mod. Phys."},{"key":"2023070216251377700_c8","first-page":"411","volume":"54","year":"1981","journal-title":"Sov. Phys. JETP"},{"key":"2023070216251377700_c9","doi-asserted-by":"publisher","first-page":"1069","DOI":"10.1016\/0038-1098(81)90210-6","volume":"39","year":"1981","journal-title":"Solid State Commun."},{"key":"2023070216251377700_c10","first-page":"195","volume":"36","year":"1982","journal-title":"JETP Lett."}],"container-title":["Applied Physics Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.2813615\/13385075\/202107_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.2813615\/13385075\/202107_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,7,2]],"date-time":"2023-07-02T16:25:21Z","timestamp":1688315121000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/apl\/article\/91\/20\/202107\/325046\/Large-negative-magnetoresistance-in-Ge-films-at"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2007,11,12]]},"references-count":12,"journal-issue":{"issue":"20","published-print":{"date-parts":[[2007,11,12]]}},"URL":"https:\/\/doi.org\/10.1063\/1.2813615","relation":{},"ISSN":["0003-6951","1077-3118"],"issn-type":[{"value":"0003-6951","type":"print"},{"value":"1077-3118","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2007,11,12]]},"published":{"date-parts":[[2007,11,12]]},"article-number":"202107"}}