{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T10:50:01Z","timestamp":1753872601278,"version":"3.41.2"},"reference-count":24,"publisher":"AIP Publishing","issue":"23","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2007,12,3]]},"abstract":"<jats:p>We propose that a defect complex comprising a suboxide Hf\u2013Si bond and an interfacial dangling bond is responsible for the stress-induced buildup of interface traps in Si\u2215SiO2\u2215HfO2 capacitors. With the aid of first-principles calculations, we show that these defects possess a symmetric double-well energy minimum with a moderate intervening barrier. The calculated activation energies suggest a relatively easy hopping of H atoms between the two energy minima (a field-aided shuttling mechanism). This mechanism can explain the experimentally measured oscillations of interface-trap densities during switched-bias conditions following x-ray irradiation or constant-voltage stress.<\/jats:p>","DOI":"10.1063\/1.2820380","type":"journal-article","created":{"date-parts":[[2007,12,5]],"date-time":"2007-12-05T07:18:33Z","timestamp":1196839113000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":30,"title":["Hydrogen shuttling near Hf-defect complexes in Si\u2215SiO2\u2215HfO2 structures"],"prefix":"10.1063","volume":"91","author":[{"given":"A. G.","family":"Marinopoulos","sequence":"first","affiliation":[{"name":"Vanderbilt University Department of Physics and Astronomy, , Nashville, Tennessee 37235, USA"}]},{"given":"I.","family":"Batyrev","sequence":"additional","affiliation":[{"name":"Vanderbilt University Department of Physics and Astronomy, , Nashville, Tennessee 37235, USA"}]},{"given":"X. 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