{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T12:40:45Z","timestamp":1760100045777,"version":"3.41.2"},"reference-count":15,"publisher":"AIP Publishing","issue":"4","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2008,2,15]]},"abstract":"<jats:p>Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite InxAlyGa1\u2212x\u2212yN (x\u223c0.06, 0.02&amp;lt;y&amp;lt;0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancement of the integrated intensity and an increasing Stokes shift with the Al content. Both effects arise from an Al-enhanced exciton localization revealed by the S- and W-shaped temperature dependences of the photoluminescence emission energy and bandwidth, respectively. Present results point to these materials as a promising choice for the active region in efficient light emitters. An In-related bowing parameter of 1.6eV was derived from optical absorption data.<\/jats:p>","DOI":"10.1063\/1.2874451","type":"journal-article","created":{"date-parts":[[2008,2,21]],"date-time":"2008-02-21T23:43:16Z","timestamp":1203637396000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":12,"title":["Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content"],"prefix":"10.1063","volume":"103","author":[{"given":"S.","family":"Fern\u00e1ndez-Garrido","sequence":"first","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]},{"given":"J.","family":"Pereiro","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]},{"given":"F.","family":"Gonz\u00e1lez-Posada","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]},{"given":"E.","family":"Mu\u00f1oz","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]},{"given":"E.","family":"Calleja","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]},{"given":"A.","family":"Redondo-Cubero","sequence":"additional","affiliation":[{"name":"Universidad Aut\u00f3noma de Madrid 2 Centro de Micro-An\u00e1lisis de Materiales, , Cantoblanco, 28049 Madrid, Spain"}]},{"given":"R.","family":"Gago","sequence":"additional","affiliation":[{"name":"Universidad Aut\u00f3noma de Madrid 2 Centro de Micro-An\u00e1lisis de Materiales, , Cantoblanco, 28049 Madrid, Spain"}]}],"member":"317","published-online":{"date-parts":[[2008,2,20]]},"reference":[{"key":"2023070504044560900_c1","doi-asserted-by":"publisher","first-page":"956","DOI":"10.1126\/science.281.5379.956","volume":"281","year":"1998","journal-title":"Science"},{"key":"2023070504044560900_c2","doi-asserted-by":"publisher","first-page":"810","DOI":"10.1038\/nmat1726","volume":"5","year":"2006","journal-title":"Nat. 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