{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T12:41:46Z","timestamp":1760100106757,"version":"3.41.2"},"reference-count":28,"publisher":"AIP Publishing","issue":"8","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2008,10,15]]},"abstract":"<jats:p>Indium incorporation into wurtzite (0001)-oriented InxAlyGa1\u2212x\u2212yN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565\u2013635\u2009\u00b0C) and the AlN mole fraction (0.01&amp;lt;y&amp;lt;0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In\u2013N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM.<\/jats:p>","DOI":"10.1063\/1.2999564","type":"journal-article","created":{"date-parts":[[2008,10,22]],"date-time":"2008-10-22T22:11:51Z","timestamp":1224713511000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":14,"title":["Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy"],"prefix":"10.1063","volume":"104","author":[{"given":"S.","family":"Fern\u00e1ndez-Garrido","sequence":"first","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]},{"given":"A.","family":"Redondo-Cubero","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"},{"name":"Universidad Aut\u00f3noma de Madrid 2 Centro de Micro-An\u00e1lisis de Materiales, , 28049 Cantoblanco, Madrid, Spain"}]},{"given":"R.","family":"Gago","sequence":"additional","affiliation":[{"name":"Universidad Aut\u00f3noma de Madrid 2 Centro de Micro-An\u00e1lisis de Materiales, , 28049 Cantoblanco, Madrid, Spain"},{"name":"Consejo Superior de Investigaciones Cient\u00edficas 3 Instituto de Ciencia de Materiales de Madrid, , E-28049 Madrid, Spain"}]},{"given":"F.","family":"Bertram","sequence":"additional","affiliation":[{"name":"Otto-von-Guericke University 4 Institute of Experimental Physics, , Magdeburg, P.O. Box 4120, 39160 Magdeburg, Germany"}]},{"given":"J.","family":"Christen","sequence":"additional","affiliation":[{"name":"Otto-von-Guericke University 4 Institute of Experimental Physics, , Magdeburg, P.O. Box 4120, 39160 Magdeburg, Germany"}]},{"given":"E.","family":"Luna","sequence":"additional","affiliation":[{"name":"Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik 5 , Hausvogteiplatz 5-7, 10117 Berlin, Germany"}]},{"given":"A.","family":"Trampert","sequence":"additional","affiliation":[{"name":"Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik 5 , Hausvogteiplatz 5-7, 10117 Berlin, Germany"}]},{"given":"J.","family":"Pereiro","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]},{"given":"E.","family":"Mu\u00f1oz","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]},{"given":"E.","family":"Calleja","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 1 ISOM and Dpt. de Ingenier\u00eda Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, , Ciudad Universitaria s\/n, 28040 Madrid, Spain"}]}],"member":"317","published-online":{"date-parts":[[2008,10,22]]},"reference":[{"key":"2023070321073814800_c1","doi-asserted-by":"publisher","first-page":"1161","DOI":"10.1063\/1.125970","volume":"76","year":"2000","journal-title":"Appl. Phys. Lett."},{"key":"2023070321073814800_c2","doi-asserted-by":"crossref","first-page":"3941","DOI":"10.1002\/pssc.200562042","volume":"2","year":"2005","journal-title":"Phys. Status Solidi C"},{"key":"2023070321073814800_c3","doi-asserted-by":"publisher","first-page":"956","DOI":"10.1126\/science.281.5379.956","volume":"281","year":"1998","journal-title":"Science"},{"key":"2023070321073814800_c4","doi-asserted-by":"publisher","first-page":"091101","DOI":"10.1063\/1.1899760","volume":"97","year":"2005","journal-title":"J. Appl. Phys."},{"key":"2023070321073814800_c5","doi-asserted-by":"crossref","first-page":"810","DOI":"10.1038\/nmat1726","volume":"5","year":"2006","journal-title":"Nat. Mater."},{"key":"2023070321073814800_c6","doi-asserted-by":"publisher","first-page":"341","DOI":"10.1016\/S0022-0248(00)00887-3","volume":"220","year":"2000","journal-title":"J. Cryst. Growth"},{"key":"2023070321073814800_c7","doi-asserted-by":"publisher","first-page":"527","DOI":"10.1016\/j.mssp.2003.08.010","volume":"6","year":"2003","journal-title":"Mater. Sci. Semicond. Process."},{"key":"2023070321073814800_c8","doi-asserted-by":"publisher","first-page":"3121","DOI":"10.1063\/1.1598633","volume":"94","year":"2003","journal-title":"J. Appl. Phys."},{"key":"2023070321073814800_c9","doi-asserted-by":"publisher","first-page":"2242","DOI":"10.1063\/1.1566465","volume":"82","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"2023070321073814800_c10","doi-asserted-by":"publisher","first-page":"476","DOI":"10.1016\/S0022-0248(02)02275-3","volume":"251","year":"2003","journal-title":"J. Cryst. Growth"},{"key":"2023070321073814800_c11","doi-asserted-by":"publisher","first-page":"765","DOI":"10.1088\/0022-3727\/40\/3\/012","volume":"40","year":"2007","journal-title":"J. Phys. D"},{"key":"2023070321073814800_c12","doi-asserted-by":"publisher","first-page":"925","DOI":"10.1063\/1.1392301","volume":"79","year":"2001","journal-title":"Appl. Phys. Lett."},{"key":"2023070321073814800_c13","doi-asserted-by":"crossref","first-page":"2941","DOI":"10.1143\/JJAP.47.2941","volume":"47","year":"2008","journal-title":"Jpn. J. Appl. Phys."},{"key":"2023070321073814800_c14","doi-asserted-by":"publisher","first-page":"1855","DOI":"10.1063\/1.1305830","volume":"88","year":"2000","journal-title":"J. Appl. Phys."},{"volume-title":"Handbook of Modern Ion Beam Material Analysis","year":"1995","author":"Tesmer","key":"2023070321073814800_c15"},{"key":"2023070321073814800_c16","doi-asserted-by":"publisher","first-page":"588","DOI":"10.1016\/0168-583X(94)95888-2","volume":"85","year":"1994","journal-title":"Nucl. Instrum. Methods Phys. Res. B"},{"key":"2023070321073814800_c17","doi-asserted-by":"publisher","first-page":"1550","DOI":"10.1063\/1.1535734","volume":"93","year":"2003","journal-title":"J. Appl. Phys."},{"key":"2023070321073814800_c18","doi-asserted-by":"publisher","first-page":"165419","DOI":"10.1103\/PhysRevB.67.165419","volume":"67","year":"2003","journal-title":"Phys. Rev. B"},{"key":"2023070321073814800_c19","doi-asserted-by":"publisher","first-page":"9591","DOI":"10.1063\/1.1575929","volume":"93","year":"2003","journal-title":"J. Appl. Phys."},{"key":"2023070321073814800_c20","doi-asserted-by":"publisher","first-page":"074902","DOI":"10.1063\/1.2181415","volume":"99","year":"2006","journal-title":"J. Appl. Phys."},{"key":"2023070321073814800_c21","doi-asserted-by":"publisher","first-page":"161904","DOI":"10.1063\/1.2789691","volume":"91","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"2023070321073814800_c22","doi-asserted-by":"publisher","first-page":"102","DOI":"10.1016\/S0022-0248(97)00083-3","volume":"178","year":"1997","journal-title":"J. Cryst. Growth"},{"key":"2023070321073814800_c23","doi-asserted-by":"publisher","first-page":"033541","DOI":"10.1063\/1.2968442","volume":"104","year":"2008","journal-title":"J. Appl. Phys."},{"key":"2023070321073814800_c24","doi-asserted-by":"publisher","first-page":"3232","DOI":"10.1063\/1.122728","volume":"73","year":"1998","journal-title":"Appl. Phys. Lett."},{"key":"2023070321073814800_c25","doi-asserted-by":"publisher","first-page":"301","DOI":"10.1002\/(SICI)1521-396X(199911)176:1&lt;301::AID-PSSA301&gt;3.0.CO;2-H","volume":"176","year":"1999","journal-title":"Phys. Status Solidi A"},{"key":"2023070321073814800_c26","doi-asserted-by":"publisher","first-page":"611","DOI":"10.1002\/1521-396X(200112)188:2&lt;611::AID-PSSA611&gt;3.0.CO;2-Z","volume":"188","year":"2001","journal-title":"Phys. Status Solidi A"},{"key":"2023070321073814800_c27","doi-asserted-by":"publisher","first-page":"046104","DOI":"10.1063\/1.2874451","volume":"103","year":"2008","journal-title":"J. Appl. Phys."},{"key":"2023070321073814800_c28","doi-asserted-by":"publisher","first-page":"4868","DOI":"10.1063\/1.1407849","volume":"90","year":"2001","journal-title":"J. Appl. Phys."}],"container-title":["Journal of Applied Physics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.2999564\/10390142\/083510_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.2999564\/10390142\/083510_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,7,4]],"date-time":"2023-07-04T00:01:18Z","timestamp":1688428878000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/jap\/article\/104\/8\/083510\/343198\/Effect-of-the-growth-temperature-and-the-AlN-mole"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,10,15]]},"references-count":28,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2008,10,15]]}},"URL":"https:\/\/doi.org\/10.1063\/1.2999564","relation":{},"ISSN":["0021-8979","1089-7550"],"issn-type":[{"type":"print","value":"0021-8979"},{"type":"electronic","value":"1089-7550"}],"subject":[],"published-other":{"date-parts":[[2008,10,15]]},"published":{"date-parts":[[2008,10,15]]},"article-number":"083510"}}