{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T21:14:19Z","timestamp":1760217259699,"version":"3.41.2"},"reference-count":23,"publisher":"AIP Publishing","issue":"2","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2009,1,12]]},"abstract":"<jats:p>The free electron behavior in InN is studied on the basis of decoupled bulk and surface accumulation electron densities in InN films measured by contactless optical Hall effect. It is shown that the variation in the bulk electron density with film thickness does not follow the models of free electrons generated by dislocation-associated nitrogen vacancies. This finding, further supported by transmission electron microscopy results, indicates the existence of a different thickness-dependent doping mechanism. Furthermore, we observe a noticeable dependence of the surface electron density on the bulk density, which can be exploited for tuning the surface charge in future InN based devices.<\/jats:p>","DOI":"10.1063\/1.3065030","type":"journal-article","created":{"date-parts":[[2009,1,15]],"date-time":"2009-01-15T23:59:45Z","timestamp":1232063985000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":41,"title":["Free electron behavior in InN: On the role of dislocations and surface electron accumulation"],"prefix":"10.1063","volume":"94","author":[{"given":"V.","family":"Darakchieva","sequence":"first","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"},{"name":"Link\u00f6ping University 2 IFM, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"T.","family":"Hofmann","sequence":"additional","affiliation":[{"name":"University of Nebraska-Lincoln 3 Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience, , Nebraska 68588, USA"}]},{"given":"M.","family":"Schubert","sequence":"additional","affiliation":[{"name":"University of Nebraska-Lincoln 3 Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience, , Nebraska 68588, USA"}]},{"given":"B. E.","family":"Sernelius","sequence":"additional","affiliation":[{"name":"Link\u00f6ping University 2 IFM, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"B.","family":"Monemar","sequence":"additional","affiliation":[{"name":"Link\u00f6ping University 2 IFM, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"P. O. \u00c5.","family":"Persson","sequence":"additional","affiliation":[{"name":"Link\u00f6ping University 2 IFM, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"F.","family":"Giuliani","sequence":"additional","affiliation":[{"name":"Link\u00f6ping University 2 IFM, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"H.","family":"Lu","sequence":"additional","affiliation":[{"name":"Cornell University 4 Department of Electrical and Computer Engineering, , Ithaca, New York 14853, USA"}]},{"given":"W. 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