{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T06:41:45Z","timestamp":1775457705303,"version":"3.50.1"},"reference-count":24,"publisher":"AIP Publishing","issue":"6","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2009,3,15]]},"abstract":"<jats:p>The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc\u2009sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template.<\/jats:p>","DOI":"10.1063\/1.3093700","type":"journal-article","created":{"date-parts":[[2009,3,19]],"date-time":"2009-03-19T22:17:33Z","timestamp":1237501053000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":17,"title":["Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers"],"prefix":"10.1063","volume":"105","author":[{"given":"V.","family":"Tasco","sequence":"first","affiliation":[{"name":"National Nanotechnology Laboratory of CNR-INFM 1 , via Arnesano, 73100 Lecce, Italy"}]},{"given":"A.","family":"Campa","sequence":"additional","affiliation":[{"name":"National Nanotechnology Laboratory of CNR-INFM 1 , via Arnesano, 73100 Lecce, Italy"}]},{"given":"I.","family":"Tarantini","sequence":"additional","affiliation":[{"name":"National Nanotechnology Laboratory of CNR-INFM 1 , via Arnesano, 73100 Lecce, Italy"}]},{"given":"A.","family":"Passaseo","sequence":"additional","affiliation":[{"name":"National Nanotechnology Laboratory of CNR-INFM 1 , via Arnesano, 73100 Lecce, Italy"}]},{"given":"F.","family":"Gonz\u00e1lez-Posada","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 2 ISOM and DIE, ETSI Telecomunicaci\u00f3n, , E-28040 Madrid, Spain"}]},{"given":"A.","family":"Redondo-Cubero","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 2 ISOM and DIE, ETSI Telecomunicaci\u00f3n, , E-28040 Madrid, Spain"},{"name":"Universidad Aut\u00f3noma de Madrid 3 Centro de Micro-An\u00e1lisis de Materiales, , E-28049 Madrid, Spain"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 4 , Estrada Nacional 10, 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"N.","family":"Franco","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 4 , Estrada Nacional 10, 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"E.","family":"Mu\u00f1oz","sequence":"additional","affiliation":[{"name":"Universidad Polit\u00e9cnica de Madrid 2 ISOM and DIE, ETSI Telecomunicaci\u00f3n, , E-28040 Madrid, Spain"}]}],"member":"317","published-online":{"date-parts":[[2009,3,19]]},"reference":[{"key":"2023070615523010600_c1","doi-asserted-by":"publisher","first-page":"667","DOI":"10.1088\/0034-4885\/67\/5\/R02","volume":"67","year":"2004","journal-title":"Rep. 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