{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,17]],"date-time":"2026-02-17T02:58:25Z","timestamp":1771297105186,"version":"3.50.1"},"reference-count":46,"publisher":"AIP Publishing","issue":"6","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2009,9,15]]},"abstract":"<jats:p>Molybdenum (0\u20131\u2002at.\u2009%) doped indium oxide thin films with high near-infrared (NIR) transparency and high carrier mobility were deposited on Corning-1737 glass substrates at 400\u2009\u00b0C by a spray pyrolysis experimental technique. X-ray diffraction (XRD) analysis confirmed the cubic bixbyite structure of indium oxide. The preferred growth orientation along the (222) plane for the low Mo doping level (\u22640.5\u2002at.\u2009%) shifts to (400) for higher Mo doping levels (&amp;gt;0.6\u2002at.\u2009%). The crystallite size extracted from the XRD data corroborates the changes in full width at half maximum due to the variation in Mo doping. A scanning electron microscopy study illustrated the evolution in the surface microstructure as a function of Mo doping. The negative sign of the Hall coefficient confirmed the n-type conductivity. A high carrier mobility of \u223c122.4\u2002cm2\/V\u2009s, a carrier concentration of \u223c9.5\u00d71019\u2002cm\u22123, a resistivity of \u223c5.3\u00d710\u22124\u2002\u03a9\u2009cm, and a high figure of merit of \u223c4.2\u00d710\u22122\u2002\u03a9\u22121 are observed for the films deposited with 0.5\u2002at.\u2009% Mo. The obtained high average transparency of \u223c83% in the wavelengths ranging from 400 to 2500 nm confirmed the extension of transmittance well into the NIR region.<\/jats:p>","DOI":"10.1063\/1.3224946","type":"journal-article","created":{"date-parts":[[2009,9,28]],"date-time":"2009-09-28T19:43:43Z","timestamp":1254167023000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":24,"title":["High near-infrared transparency and carrier mobility of Mo doped In2O3 thin films for optoelectronics applications"],"prefix":"10.1063","volume":"106","author":[{"given":"S.","family":"Parthiban","sequence":"first","affiliation":[{"name":"Bharathidasan University 1 Crystal Growth and Thin Film Laboratory, School of Physics, , Tiruchirappalli-620 024, India"}]},{"given":"E.","family":"Elangovan","sequence":"additional","affiliation":[{"name":"FCT-UNL 2 CENIMAT-I3N and CEMOP-UNINOVA, Materials Science Department, , 2829-516 Caparica, Portugal"}]},{"given":"K.","family":"Ramamurthi","sequence":"additional","affiliation":[{"name":"Bharathidasan University 1 Crystal Growth and Thin Film Laboratory, School of Physics, , Tiruchirappalli-620 024, India"}]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[{"name":"FCT-UNL 2 CENIMAT-I3N and CEMOP-UNINOVA, Materials Science Department, , 2829-516 Caparica, Portugal"}]},{"given":"E.","family":"Fortunato","sequence":"additional","affiliation":[{"name":"FCT-UNL 2 CENIMAT-I3N and CEMOP-UNINOVA, Materials Science Department, , 2829-516 Caparica, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2009,9,25]]},"reference":[{"key":"2023062400113419500_c1","doi-asserted-by":"publisher","first-page":"082104","DOI":"10.1063\/1.2337281","volume":"89","year":"2006","journal-title":"Appl. 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