{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T10:53:25Z","timestamp":1753872805481,"version":"3.41.2"},"reference-count":18,"publisher":"AIP Publishing","issue":"20","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2009,11,16]]},"abstract":"<jats:p>The free electron properties of nonpolar (112\u00af0)-oriented and semipolar (101\u00af1)-oriented wurtzite InN films are studied by generalized infrared ellipsometry (GIRSE). We demonstrate the sensitivity of GIRSE to the surface charge accumulation layer and find a distinct surface electron accumulation to occur at all surfaces. The obtained surface electron sheet densities are found to vary from 0.9\u00d71013 to 2.3\u00d71014\u2002cm\u22122 depending on the surface orientation and bulk electron concentration. The upper limits of the surface electron mobility parameters of 417\u2013644\u2002cm2\/V\u2009s are determined and discussed in the light of electron confinement at the surface.<\/jats:p>","DOI":"10.1063\/1.3261731","type":"journal-article","created":{"date-parts":[[2009,11,18]],"date-time":"2009-11-18T03:04:24Z","timestamp":1258513464000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":23,"title":["Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry"],"prefix":"10.1063","volume":"95","author":[{"given":"V.","family":"Darakchieva","sequence":"first","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"},{"name":"Link\u00f6ping University 2 Department of Physics, Chemistry and Biology, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"M.","family":"Schubert","sequence":"additional","affiliation":[{"name":"University of Nebraska 3 Department of Electrical Engineering, , Lincoln, Nebraska 68588, USA"}]},{"given":"T.","family":"Hofmann","sequence":"additional","affiliation":[{"name":"University of Nebraska 3 Department of Electrical Engineering, , Lincoln, Nebraska 68588, USA"}]},{"given":"B.","family":"Monemar","sequence":"additional","affiliation":[{"name":"Link\u00f6ping University 2 Department of Physics, Chemistry and Biology, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"Ching-Lien","family":"Hsiao","sequence":"additional","affiliation":[{"name":"National Taiwan University 4 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"Ting-Wei","family":"Liu","sequence":"additional","affiliation":[{"name":"National Taiwan University 4 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"Li-Chyong","family":"Chen","sequence":"additional","affiliation":[{"name":"National Taiwan University 4 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"W. J.","family":"Schaff","sequence":"additional","affiliation":[{"name":"Cornell University 5 Department of Electrical and Computer Engineering, , Ithaca, New York 14853, USA"}]},{"given":"Y.","family":"Takagi","sequence":"additional","affiliation":[{"name":"Ritsumeikan University 6 Department of Photonics, , Shiga 525-8577, Japan"}]},{"given":"Y.","family":"Nanishi","sequence":"additional","affiliation":[{"name":"Ritsumeikan University 6 Department of Photonics, , Shiga 525-8577, Japan"}]}],"member":"317","published-online":{"date-parts":[[2009,11,17]]},"reference":[{"key":"2023070217000366100_c1","doi-asserted-by":"publisher","first-page":"1736","DOI":"10.1063\/1.1562340","volume":"82","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"2023070217000366100_c2","doi-asserted-by":"publisher","first-page":"036804","DOI":"10.1103\/PhysRevLett.92.036804","volume":"92","year":"2004","journal-title":"Phys. Rev. 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