{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,29]],"date-time":"2026-04-29T17:22:08Z","timestamp":1777483328759,"version":"3.51.4"},"reference-count":29,"publisher":"AIP Publishing","issue":"2","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,1,15]]},"abstract":"<jats:p>AlN films grown on sapphire were implanted with 300 keV Eu ions to fluences from 3\u00d71014 to 1.4\u00d71017\u2002atoms\/cm2 in two different geometries: \u201cchanneled\u201d along the c-axis and \u201crandom\u201d with a 10\u00b0 angle between the ion beam and the surface normal. A detailed study of implantation damage accumulation is presented. Strong ion channeling effects are observed leading to significantly decreased damage levels for the channeled implantation within the entire fluence range. For random implantation, a buried amorphous layer is formed at the highest fluences. Red Eu-related photoluminescence at room temperature is observed in all samples with highest intensities for low damage samples (low fluence and channeled implantation) after annealing. Implantation damage, once formed, is shown to be stable up to very high temperatures.<\/jats:p>","DOI":"10.1063\/1.3291100","type":"journal-article","created":{"date-parts":[[2010,1,28]],"date-time":"2010-01-28T23:09:33Z","timestamp":1264720173000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":40,"title":["Optical doping and damage formation in AlN by Eu implantation"],"prefix":"10.1063","volume":"107","author":[{"given":"K.","family":"Lorenz","sequence":"first","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , Estrada Nacional 10, 2686-953 Sacav\u00e9m, Portugal and CFNUL, Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , Estrada Nacional 10, 2686-953 Sacav\u00e9m, Portugal and CFNUL, Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal"}]},{"given":"F.","family":"Gloux","sequence":"additional","affiliation":[{"name":"CNRS-ENSICAEN-CEA-UCBN 2 CIMAP, UMR 6252, , 6 Boulevard du Marechal Juin, 14050 Caen Cedex, France"}]},{"given":"P.","family":"Ruterana","sequence":"additional","affiliation":[{"name":"CNRS-ENSICAEN-CEA-UCBN 2 CIMAP, UMR 6252, , 6 Boulevard du Marechal Juin, 14050 Caen Cedex, France"}]},{"given":"M.","family":"Peres","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro 3 Departamento de F\u00edsica and I3N, , 3810-193 Aveiro, Portugal"}]},{"given":"A. J.","family":"Neves","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro 3 Departamento de F\u00edsica and I3N, , 3810-193 Aveiro, Portugal"}]},{"given":"T.","family":"Monteiro","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro 3 Departamento de F\u00edsica and I3N, , 3810-193 Aveiro, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2010,1,28]]},"reference":[{"key":"2023070604321835400_c1","doi-asserted-by":"publisher","first-page":"718","DOI":"10.1049\/el:19890486","volume":"25","year":"1989","journal-title":"Electron. Lett."},{"key":"2023070604321835400_c2","doi-asserted-by":"publisher","first-page":"91","DOI":"10.1051\/epjap:2006122","volume":"36","year":"2006","journal-title":"Eur. Phys. J.: Appl. Phys."},{"key":"2023070604321835400_c3","doi-asserted-by":"publisher","first-page":"749","DOI":"10.1109\/JSTQE.2002.801690","volume":"8","year":"2002","journal-title":"IEEE J. Sel. Top. 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