{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,27]],"date-time":"2025-10-27T20:33:09Z","timestamp":1761597189795,"version":"3.41.2"},"reference-count":23,"publisher":"AIP Publishing","issue":"8","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,2,22]]},"abstract":"<jats:p>We study the unintentional H impurities in relation to the free electron properties of state-of-the-art InN films grown by molecular beam epitaxy (MBE). Enhanced concentrations of H are revealed in the near surface regions of the films, indicating postgrowth surface contamination by H. The near surface hydrogen could not be removed upon thermal annealing and may have significant implications for the surface and bulk free electron properties of InN. The bulk free electron concentrations were found to scale with the bulk H concentrations while no distinct correlation with dislocation density could be inferred, indicating a major role of hydrogen for the unintentional conductivity in MBE InN.<\/jats:p>","DOI":"10.1063\/1.3327333","type":"journal-article","created":{"date-parts":[[2010,2,24]],"date-time":"2010-02-24T15:25:22Z","timestamp":1267025122000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":35,"title":["Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material"],"prefix":"10.1063","volume":"96","author":[{"given":"V.","family":"Darakchieva","sequence":"first","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"},{"name":"Link\u00f6ping University 2 Department of Physics, Chemistry and Biology, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"N. P.","family":"Barradas","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"B.","family":"Monemar","sequence":"additional","affiliation":[{"name":"Link\u00f6ping University 2 Department of Physics, Chemistry and Biology, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"M.","family":"Schubert","sequence":"additional","affiliation":[{"name":"University of Nebraska 3 Department of Electrical Engineering, , Lincoln, Nebraska 68588, USA"}]},{"given":"N.","family":"Franco","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"C. L.","family":"Hsiao","sequence":"additional","affiliation":[{"name":"National Taiwan University 4 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"L. C.","family":"Chen","sequence":"additional","affiliation":[{"name":"National Taiwan University 4 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"W. J.","family":"Schaff","sequence":"additional","affiliation":[{"name":"Cornell University 5 Department of Electrical and Computer Engineering, , Ithaca, New York 14853, USA"}]},{"given":"L. W.","family":"Tu","sequence":"additional","affiliation":[{"name":"National Sun Yat-Sen University 6 Department of Physics and Center for Nanoscience and Nanotechnology, , Kaohsiung 80424, Taiwan"}]},{"given":"T.","family":"Yamaguchi","sequence":"additional","affiliation":[{"name":"Ritsumeikan University 7 Department of Photonics, , Shiga 525-8577, Japan"}]},{"given":"Y.","family":"Nanishi","sequence":"additional","affiliation":[{"name":"Ritsumeikan University 7 Department of Photonics, , Shiga 525-8577, Japan"}]}],"member":"317","published-online":{"date-parts":[[2010,2,23]]},"reference":[{"key":"2023062803295120200_c1","doi-asserted-by":"publisher","first-page":"179","DOI":"10.1146\/annurev.matsci.36.010705.155428","volume":"36","year":"2006","journal-title":"Annu. Rev. Mater. Res."},{"key":"2023062803295120200_c2","doi-asserted-by":"publisher","first-page":"032104","DOI":"10.1063\/1.2832369","volume":"92","year":"2008","journal-title":"Appl. Phys. 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