{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,26]],"date-time":"2025-10-26T14:20:34Z","timestamp":1761488434609,"version":"3.41.2"},"reference-count":12,"publisher":"AIP Publishing","issue":"17","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,4,26]]},"abstract":"<jats:p>We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4\u2002mm2 shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection.<\/jats:p>","DOI":"10.1063\/1.3422479","type":"journal-article","created":{"date-parts":[[2010,5,1]],"date-time":"2010-05-01T00:02:28Z","timestamp":1272672148000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":11,"title":["Phototransistor with nanocrystalline Si\/amorphous Si bilayer channel"],"prefix":"10.1063","volume":"96","author":[{"given":"Yuri","family":"Vygranenko","sequence":"first","affiliation":[{"name":"ISEL 1 Department of Electronics, Telecommunications and Computer Engineering, , P-1959-007 Lisbon, Portugal"}]},{"given":"Arokia","family":"Nathan","sequence":"additional","affiliation":[{"name":"University College London 2 London Centre for Nanotechnology, , London WC1H 0AH, United Kingdom"}]},{"given":"Manuela","family":"Vieira","sequence":"additional","affiliation":[{"name":"ISEL 1 Department of Electronics, Telecommunications and Computer Engineering, , P-1959-007 Lisbon, Portugal"},{"name":"CTS-UNINOVA 3 , Quinta da Torre, P-2829-516 Caparica, Portugal"}]},{"given":"Andrei","family":"Sazonov","sequence":"additional","affiliation":[{"name":"University of Waterloo 4 Department of Electrical and Computer Engineering, , Ontario N2L 3G1, Canada"}]}],"member":"317","published-online":{"date-parts":[[2010,4,30]]},"reference":[{"key":"2023062119361537300_c1","doi-asserted-by":"publisher","first-page":"465","DOI":"10.1109\/16.658682","volume":"45","year":"1998","journal-title":"IEEE Trans. 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