{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,7]],"date-time":"2026-05-07T16:23:43Z","timestamp":1778171023435,"version":"3.51.4"},"reference-count":23,"publisher":"AIP Publishing","issue":"5","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,8,2]]},"abstract":"<jats:p>P-type thin-film transistors (TFTs) using room temperature sputtered SnOx\u2008(x&amp;lt;2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal \u03b2-Sn and \u03b1-SnOx phases, after annealing at 200\u2009\u00b0C. These films exhibit a hole carrier concentration in the range of \u22481016\u20131018\u2002cm\u22123; electrical resistivity between 101\u2013102\u2002\u03a9\u2009cm; Hall mobility around 4.8\u2002cm2\/V\u2009s; optical band gap of 2.8 eV; and average transmittance \u224885% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1\u2002cm2\/V\u2009s and an ON\/OFF modulation ratio of 103.<\/jats:p>","DOI":"10.1063\/1.3469939","type":"journal-article","created":{"date-parts":[[2010,8,5]],"date-time":"2010-08-05T01:29:44Z","timestamp":1280971784000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":301,"title":["Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing"],"prefix":"10.1063","volume":"97","author":[{"given":"Elvira","family":"Fortunato","sequence":"first","affiliation":[{"name":"Universidade Nova de Lisboa and 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia, FCT, CEMOP\/UNINOVA, , 2829-516 Caparica, Portugal"}]},{"given":"Raquel","family":"Barros","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa and 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia, FCT, CEMOP\/UNINOVA, , 2829-516 Caparica, Portugal"},{"name":"INNOVNANO 2 Materiais Avan\u00e7ados, , SA, 7600-095 Aljustrel, Portugal"}]},{"given":"Pedro","family":"Barquinha","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa and 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia, FCT, CEMOP\/UNINOVA, , 2829-516 Caparica, Portugal"}]},{"given":"Vitor","family":"Figueiredo","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa and 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia, FCT, CEMOP\/UNINOVA, , 2829-516 Caparica, Portugal"}]},{"given":"Sang-Hee Ko","family":"Park","sequence":"additional","affiliation":[{"name":"Electronic and Telecommunications Research Institute 3 , 138 Gajeongro, Yuseong-gu, Daejeon 305-700, Republic of Korea"}]},{"given":"Chi-Sun","family":"Hwang","sequence":"additional","affiliation":[{"name":"Electronic and Telecommunications Research Institute 3 , 138 Gajeongro, Yuseong-gu, Daejeon 305-700, Republic of Korea"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa and 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia, FCT, CEMOP\/UNINOVA, , 2829-516 Caparica, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2010,8,4]]},"reference":[{"key":"2023062502331805200_c1","doi-asserted-by":"publisher","first-page":"590","DOI":"10.1002\/adma.200400368","volume":"17","year":"2005","journal-title":"Adv. Mater. (Weinheim, Ger.)"},{"key":"2023062502331805200_c2","doi-asserted-by":"publisher","first-page":"R34","DOI":"10.1002\/pssr.200600049","volume":"1","year":"2007","journal-title":"Phys. Status Solidi (RRL)"},{"key":"2023062502331805200_c3","doi-asserted-by":"publisher","first-page":"H161","DOI":"10.1149\/1.3049819","volume":"156","year":"2009","journal-title":"J. Electrochem. Soc."},{"key":"2023062502331805200_c4","doi-asserted-by":"publisher","first-page":"222103","DOI":"10.1063\/1.2937473","volume":"92","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"2023062502331805200_c5","doi-asserted-by":"publisher","first-page":"H20","DOI":"10.1149\/1.3257613","volume":"13","year":"2010","journal-title":"Electrochem. Solid-State Lett."},{"key":"2023062502331805200_c6","doi-asserted-by":"publisher","first-page":"2741","DOI":"10.1080\/14786430903022671","volume":"89","year":"2009","journal-title":"Philos. Mag."},{"key":"2023062502331805200_c7","doi-asserted-by":"publisher","first-page":"202107","DOI":"10.1063\/1.3026539","volume":"93","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"2023062502331805200_c8","doi-asserted-by":"publisher","first-page":"032113","DOI":"10.1063\/1.2964197","volume":"93","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"2023062502331805200_c9","doi-asserted-by":"crossref","first-page":"15","DOI":"10.1038\/asiamat.2010.5","volume":"2","year":"2010","journal-title":"NPG Asia Mater"},{"key":"2023062502331805200_c10","doi-asserted-by":"publisher","first-page":"1896","DOI":"10.1103\/PhysRevB.58.1896","volume":"58","year":"1998","journal-title":"Phys. Rev. B"},{"key":"2023062502331805200_c11","doi-asserted-by":"publisher","first-page":"407","DOI":"10.1023\/A:1009959920435","volume":"4","year":"2000","journal-title":"J. Electroceram."},{"key":"2023062502331805200_c12","doi-asserted-by":"publisher","first-page":"2187","DOI":"10.1002\/pssa.200881792","volume":"206","year":"2009","journal-title":"Phys. Status Solidi A"},{"key":"2023062502331805200_c13","doi-asserted-by":"publisher","first-page":"195128","DOI":"10.1103\/PhysRevB.74.195128","volume":"74","year":"2006","journal-title":"Phys. Rev. B"},{"key":"2023062502331805200_c14","volume-title":"Oxide Semiconductors","year":"1973"},{"key":"2023062502331805200_c15","year":"2004"},{"key":"2023062502331805200_c16","doi-asserted-by":"publisher","first-page":"217","DOI":"10.1016\/0040-6090(84)90303-1","volume":"121","year":"1984","journal-title":"Thin Solid Films"},{"key":"2023062502331805200_c17","doi-asserted-by":"publisher","first-page":"1551","DOI":"10.1023\/A:1018547813759","volume":"16","year":"1997","journal-title":"J. Mater. Sci. Lett."},{"key":"2023062502331805200_c18"},{"key":"2023062502331805200_c19","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1016\/0040-6090(79)90288-8","volume":"59","year":"1979","journal-title":"Thin Solid Films"},{"key":"2023062502331805200_c20","doi-asserted-by":"publisher","first-page":"45","DOI":"10.1016\/0040-6090(80)90285-0","volume":"67","year":"1980","journal-title":"Thin Solid Films"},{"key":"2023062502331805200_c21","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1016\/0040-6090(88)90304-5","volume":"158","year":"1988","journal-title":"Thin Solid Films"},{"key":"2023062502331805200_c22","doi-asserted-by":"publisher","first-page":"7","DOI":"10.1016\/0040-6090(87)90116-7","volume":"148","year":"1987","journal-title":"Thin Solid Films"},{"key":"2023062502331805200_c23","volume-title":"Electronic Processes in Non-Crystalline Materials","year":"1979","edition":"2nd ed."}],"container-title":["Applied Physics Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.3469939\/13581083\/052105_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.3469939\/13581083\/052105_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,25]],"date-time":"2023-06-25T06:34:04Z","timestamp":1687674844000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/apl\/article\/97\/5\/052105\/166986\/Transparent-p-type-SnOx-thin-film-transistors"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,8,2]]},"references-count":23,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2010,8,2]]}},"URL":"https:\/\/doi.org\/10.1063\/1.3469939","relation":{},"ISSN":["0003-6951","1077-3118"],"issn-type":[{"value":"0003-6951","type":"print"},{"value":"1077-3118","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2010,8,2]]},"published":{"date-parts":[[2010,8,2]]},"article-number":"052105"}}