{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,23]],"date-time":"2025-09-23T13:23:30Z","timestamp":1758633810729,"version":"3.41.2"},"reference-count":45,"publisher":"AIP Publishing","issue":"7","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,10,1]]},"abstract":"<jats:p>We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) \u03b3-LiAlO2, respectively, and semipolar (101\u00af1) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111)A and InN(111)B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.<\/jats:p>","DOI":"10.1063\/1.3487923","type":"journal-article","created":{"date-parts":[[2010,10,14]],"date-time":"2010-10-14T22:41:21Z","timestamp":1287096081000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":21,"title":["Structural anisotropy of nonpolar and semipolar InN epitaxial layers"],"prefix":"10.1063","volume":"108","author":[{"given":"V.","family":"Darakchieva","sequence":"first","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"},{"name":"Link\u00f6ping University 2 Department of Physics, Chemistry, and Biology, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"M.-Y.","family":"Xie","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"},{"name":"Link\u00f6ping University 2 Department of Physics, Chemistry, and Biology, , SE-581 83 Link\u00f6ping, Sweden"}]},{"given":"N.","family":"Franco","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"F.","family":"Giuliani","sequence":"additional","affiliation":[{"name":"Imperial College 3 Department of Materials, Center for Advanced Structural Ceramics, , 2W7 2AY London, United Kingdom"}]},{"given":"B.","family":"Nunes","sequence":"additional","affiliation":[{"name":"Instituto Superior T\u00e9cnico 4 Dep. de Engenharia de Materiais, , 1049-001 Lisboa, Portugal"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"C. L.","family":"Hsiao","sequence":"additional","affiliation":[{"name":"National Taiwan University 5 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"L. C.","family":"Chen","sequence":"additional","affiliation":[{"name":"National Taiwan University 5 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"T.","family":"Yamaguchi","sequence":"additional","affiliation":[{"name":"Ritsumeikan University 6 Department of Photonics, , Shiga 525-8577, Japan"}]},{"given":"Y.","family":"Takagi","sequence":"additional","affiliation":[{"name":"Ritsumeikan University 6 Department of Photonics, , Shiga 525-8577, Japan"}]},{"given":"K.","family":"Kawashima","sequence":"additional","affiliation":[{"name":"Ritsumeikan University 6 Department of Photonics, , Shiga 525-8577, Japan"}]},{"given":"Y.","family":"Nanishi","sequence":"additional","affiliation":[{"name":"Ritsumeikan University 6 Department of Photonics, , Shiga 525-8577, Japan"}]}],"member":"317","published-online":{"date-parts":[[2010,10,13]]},"reference":[{"key":"2023070400091362300_c1","doi-asserted-by":"publisher","first-page":"865","DOI":"10.1038\/35022529","volume":"406","year":"2000","journal-title":"Nature (London)"},{"key":"2023070400091362300_c2","doi-asserted-by":"publisher","first-page":"023522","DOI":"10.1063\/1.2218385","volume":"100","year":"2006","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c3","doi-asserted-by":"publisher","first-page":"469","DOI":"10.1063\/1.1493220","volume":"81","year":"2002","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c4","doi-asserted-by":"publisher","first-page":"5208","DOI":"10.1063\/1.1636533","volume":"83","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c5","doi-asserted-by":"publisher","first-page":"033534","DOI":"10.1063\/1.2435806","volume":"101","year":"2007","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c6","doi-asserted-by":"publisher","first-page":"L1197","DOI":"10.1143\/JJAP.45.L1197","volume":"45","year":"2006","journal-title":"Jpn. J. Appl. Phys., Part 2"},{"key":"2023070400091362300_c7","doi-asserted-by":"publisher","first-page":"89","DOI":"10.1002\/pssr.200701313","volume":"2","year":"2008","journal-title":"Phys. Status Solidi (RRL)"},{"key":"2023070400091362300_c8","doi-asserted-by":"publisher","first-page":"113101","DOI":"10.1063\/1.2740361","volume":"101","year":"2007","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c9","doi-asserted-by":"publisher","first-page":"161109","DOI":"10.1063\/1.3119321","volume":"94","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c10","doi-asserted-by":"publisher","first-page":"241904","DOI":"10.1063\/1.2946655","volume":"92","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c11","doi-asserted-by":"publisher","first-page":"221110","DOI":"10.1063\/1.2938062","volume":"92","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c12","doi-asserted-by":"publisher","first-page":"021002","DOI":"10.1143\/APEX.2.021002","volume":"2","year":"2009","journal-title":"Appl. Phys. Express"},{"key":"2023070400091362300_c13","doi-asserted-by":"publisher","first-page":"499","DOI":"10.1063\/1.1644054","volume":"84","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c14","doi-asserted-by":"publisher","first-page":"55","DOI":"10.1016\/j.jcrysgro.2005.03.013","volume":"281","year":"2005","journal-title":"J. Cryst. Growth"},{"key":"2023070400091362300_c15","doi-asserted-by":"publisher","first-page":"051914","DOI":"10.1063\/1.2236901","volume":"89","year":"2006","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c16","doi-asserted-by":"publisher","first-page":"103511","DOI":"10.1063\/1.2386940","volume":"100","year":"2006","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c17","doi-asserted-by":"publisher","first-page":"5429","DOI":"10.1143\/JJAP.47.5429","volume":"47","year":"2008","journal-title":"Jpn. J. Appl. Phys."},{"key":"2023070400091362300_c18","doi-asserted-by":"publisher","first-page":"113501","DOI":"10.1063\/1.3129307","volume":"105","year":"2009","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c19","doi-asserted-by":"publisher","first-page":"135407","DOI":"10.1088\/0022-3727\/42\/13\/135407","volume":"42","year":"2009","journal-title":"J. Phys. D: Appl. Phys."},{"key":"2023070400091362300_c20","doi-asserted-by":"publisher","first-page":"231904","DOI":"10.1063\/1.3269605","volume":"95","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c21","doi-asserted-by":"publisher","first-page":"195217","DOI":"10.1103\/PhysRevB.75.195217","volume":"75","year":"2007","journal-title":"Phys. Rev. B"},{"key":"2023070400091362300_c22","doi-asserted-by":"publisher","first-page":"075202","DOI":"10.1103\/PhysRevB.65.075202","volume":"65","year":"2002","journal-title":"Phys. Rev. B"},{"key":"2023070400091362300_c23","doi-asserted-by":"publisher","first-page":"063507","DOI":"10.1063\/1.2977752","volume":"104","year":"2008","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c24","doi-asserted-by":"publisher","first-page":"024506","DOI":"10.1063\/1.3284086","volume":"107","year":"2010","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c25","doi-asserted-by":"publisher","first-page":"073502","DOI":"10.1063\/1.3359680","volume":"107","year":"2010","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c26","doi-asserted-by":"publisher","first-page":"171902","DOI":"10.1063\/1.3001806","volume":"93","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c27","doi-asserted-by":"publisher","first-page":"091905","DOI":"10.1063\/1.3092482","volume":"94","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c28","doi-asserted-by":"publisher","first-page":"111914","DOI":"10.1063\/1.2898214","volume":"92","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c29","doi-asserted-by":"publisher","first-page":"1468","DOI":"10.1002\/pssb.200565383","volume":"243","year":"2006","journal-title":"Phys. Status Solidi B"},{"key":"2023070400091362300_c30","first-page":"28","volume-title":"Indium Nitride and Related Alloys","author":"Veal","year":"2009"},{"key":"2023070400091362300_c31","doi-asserted-by":"publisher","first-page":"202103","DOI":"10.1063\/1.3261731","volume":"95","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c32","doi-asserted-by":"publisher","first-page":"1136","DOI":"10.1063\/1.1599634","volume":"83","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c33","doi-asserted-by":"publisher","first-page":"1011","DOI":"10.1002\/pssb.200743274","volume":"245","year":"2008","journal-title":"Phys. Status Solidi B"},{"key":"2023070400091362300_c34","doi-asserted-by":"publisher","first-page":"1350","DOI":"10.1116\/1.1585068","volume":"21","year":"2003","journal-title":"J. Vac. Sci. Technol. B"},{"key":"2023070400091362300_c35","doi-asserted-by":"publisher","first-page":"021910","DOI":"10.1063\/1.2953438","volume":"93","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"2023070400091362300_c36","doi-asserted-by":"crossref","first-page":"1013","DOI":"10.1080\/01418619808221225","volume":"77","year":"1998","journal-title":"Philos. Mag. A"},{"key":"2023070400091362300_c37","doi-asserted-by":"publisher","first-page":"8918","DOI":"10.1063\/1.1571217","volume":"93","year":"2003","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c38","doi-asserted-by":"publisher","first-page":"013517","DOI":"10.1063\/1.1823024","volume":"97","year":"2005","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c39","doi-asserted-by":"publisher","first-page":"389","DOI":"10.1007\/s11664-004-0189-4","volume":"33","year":"2004","journal-title":"J. Electron. Mater."},{"key":"2023070400091362300_c40","doi-asserted-by":"publisher","first-page":"166","DOI":"10.1016\/j.jcrysgro.2006.01.008","volume":"290","year":"2006","journal-title":"J. Cryst. Growth"},{"key":"2023070400091362300_c41","doi-asserted-by":"publisher","first-page":"3468","DOI":"10.1063\/1.1622985","volume":"83","year":"2003","journal-title":"Appl. Phys. Lett."},{"volume-title":"Nitrides as seen by the Technology","year":"2002","author":"Paskova","key":"2023070400091362300_c42"},{"key":"2023070400091362300_c43","doi-asserted-by":"publisher","first-page":"942","DOI":"10.1063\/1.1578530","volume":"94","year":"2003","journal-title":"J. Appl. Phys."},{"key":"2023070400091362300_c44","doi-asserted-by":"publisher","first-page":"L15","DOI":"10.1016\/j.susc.2006.12.018","volume":"601","year":"2007","journal-title":"Surf. Sci."},{"key":"2023070400091362300_c45","doi-asserted-by":"publisher","first-page":"2295","DOI":"10.1063\/1.368296","volume":"84","year":"1998","journal-title":"J. Appl. Phys."}],"container-title":["Journal of Applied Physics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.3487923\/13193263\/073529_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.3487923\/13193263\/073529_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,7,4]],"date-time":"2023-07-04T01:19:44Z","timestamp":1688433584000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/jap\/article\/108\/7\/073529\/348271\/Structural-anisotropy-of-nonpolar-and-semipolar"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,10,1]]},"references-count":45,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2010,10,1]]}},"URL":"https:\/\/doi.org\/10.1063\/1.3487923","relation":{},"ISSN":["0021-8979","1089-7550"],"issn-type":[{"type":"print","value":"0021-8979"},{"type":"electronic","value":"1089-7550"}],"subject":[],"published-other":{"date-parts":[[2010,10,1]]},"published":{"date-parts":[[2010,10,1]]},"article-number":"073529"}}