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The major optical Eu3+ centers are identical for in situ doped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+ luminescence lines are attributed to isolated, substitutional Eu.<\/jats:p>","DOI":"10.1063\/1.3489103","type":"journal-article","created":{"date-parts":[[2010,9,16]],"date-time":"2010-09-16T22:34:21Z","timestamp":1284676461000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":27,"title":["Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy"],"prefix":"10.1063","volume":"97","author":[{"given":"K.","family":"Lorenz","sequence":"first","affiliation":[{"name":"Instituto Tecnol\u00f3gico Nuclear 1 , Estrada Nacional 10, 2686-953 Sacav\u00e9m, Portugal and , Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal"},{"name":"CFNUL 1 , Estrada Nacional 10, 2686-953 Sacav\u00e9m, Portugal and , Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico Nuclear 1 , Estrada Nacional 10, 2686-953 Sacav\u00e9m, Portugal and , Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal"},{"name":"CFNUL 1 , Estrada Nacional 10, 2686-953 Sacav\u00e9m, Portugal and , Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal"}]},{"given":"I. S.","family":"Roqan","sequence":"additional","affiliation":[{"name":"University of Strathclyde 2 Department of Physics, SUPA, , Glasgow G4 0NG, Scotland, United Kingdom"}]},{"given":"K. 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