{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,12]],"date-time":"2026-05-12T08:04:04Z","timestamp":1778573044967,"version":"3.51.4"},"reference-count":34,"publisher":"AIP Publishing","issue":"8","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,10,15]]},"abstract":"<jats:p>Self-assembled GaN quantum dots (QDs) stacked in superlattices (SL) with AlN spacer layers were implanted with Europium ions to fluences of 1013, 1014, and 1015\u2002cm\u22122. The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation damage causes an expansion of the SL in the [0001] direction which increases with implantation fluence and is only partly reversed after thermal annealing at 1000\u2009\u00b0C. Nevertheless, in all cases, the SL quality remains very good after implantation and annealing with Eu ions incorporated preferentially into near-substitutional cation sites. Eu3+ optical activation is achieved after annealing in all samples. In the sample implanted with the lowest fluence, the Eu3+ emission arises mainly from Eu incorporated inside the QDs while for the higher fluences only the emission from Eu inside the AlN-buffer, capping, and spacer layers is observed.<\/jats:p>","DOI":"10.1063\/1.3496624","type":"journal-article","created":{"date-parts":[[2010,10,21]],"date-time":"2010-10-21T22:44:09Z","timestamp":1287701049000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":16,"title":["Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation"],"prefix":"10.1063","volume":"108","author":[{"given":"S.","family":"Magalh\u00e3es","sequence":"first","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , Estrada Nacional 10, 2685-953 Sacav\u00e9m, Portugal"},{"name":"Universidade de Aveiro 2 Departamento de F\u00edsica and i3N, , Campus de Santiago, 3810-193 Aveiro, Portugal"}]},{"given":"M.","family":"Peres","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro 2 Departamento de F\u00edsica and i3N, , Campus de Santiago, 3810-193 Aveiro, Portugal"}]},{"given":"V.","family":"Fellmann","sequence":"additional","affiliation":[{"name":"CEA\/Grenoble 3 D\u00e9pt. de Recherche Fondamentale sur la Mati\u00e8re Condens\u00e9e, CEA\/CNRS Group, \u201cNanophysique et Semiconducteurs,\u201d , 17 rue des Martyrs, 38054 Grenoble Cedex 9, France"}]},{"given":"B.","family":"Daudin","sequence":"additional","affiliation":[{"name":"CEA\/Grenoble 3 D\u00e9pt. de Recherche Fondamentale sur la Mati\u00e8re Condens\u00e9e, CEA\/CNRS Group, \u201cNanophysique et Semiconducteurs,\u201d , 17 rue des Martyrs, 38054 Grenoble Cedex 9, France"}]},{"given":"A. J.","family":"Neves","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro 2 Departamento de F\u00edsica and i3N, , Campus de Santiago, 3810-193 Aveiro, Portugal"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , Estrada Nacional 10, 2685-953 Sacav\u00e9m, Portugal"},{"name":"CFNUL 4 , Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal"}]},{"given":"T.","family":"Monteiro","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro 2 Departamento de F\u00edsica and i3N, , Campus de Santiago, 3810-193 Aveiro, Portugal"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , Estrada Nacional 10, 2685-953 Sacav\u00e9m, Portugal"},{"name":"CFNUL 4 , Av. 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