{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,24]],"date-time":"2025-11-24T09:48:26Z","timestamp":1763977706804,"version":"3.41.2"},"reference-count":24,"publisher":"AIP Publishing","issue":"18","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,11,1]]},"abstract":"<jats:p>The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8\u2002cm2\/V\u2009s with an Ion\/Ioff ratio of 6\u00d7107 and subthreshold swing of 0.28 V\/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications.<\/jats:p>","DOI":"10.1063\/1.3514249","type":"journal-article","created":{"date-parts":[[2010,11,6]],"date-time":"2010-11-06T00:19:43Z","timestamp":1289002783000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":75,"title":["Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric"],"prefix":"10.1063","volume":"97","author":[{"given":"Pradipta K.","family":"Nayak","sequence":"first","affiliation":[{"name":"Universidade Nova de Lisboa 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia (FCT), , 2829-516 Caparica, Portugal"}]},{"given":"Tito","family":"Busani","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia (FCT), , 2829-516 Caparica, Portugal"}]},{"given":"Elangovan","family":"Elamurugu","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia (FCT), , 2829-516 Caparica, Portugal"}]},{"given":"Pedro","family":"Barquinha","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia (FCT), , 2829-516 Caparica, Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia (FCT), , 2829-516 Caparica, Portugal"}]},{"given":"Yongtaek","family":"Hong","sequence":"additional","affiliation":[{"name":"Seoul National University 2 Department of Electrical Engineering, , Seoul 151-744, Republic of Korea"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"Universidade Nova de Lisboa 1 Departamento de Ci\u00eancia dos Materiais, CENIMAT\/I3N, Faculdade de Ci\u00eancias e Tecnologia (FCT), , 2829-516 Caparica, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2010,11,4]]},"reference":[{"key":"2023080901405990700_c1","doi-asserted-by":"publisher","first-page":"1269","DOI":"10.1126\/science.1083212","volume":"300","year":"2003","journal-title":"Science"},{"key":"2023080901405990700_c2","doi-asserted-by":"publisher","first-page":"733","DOI":"10.1063\/1.1542677","volume":"82","year":"2003","journal-title":"Appl. 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