{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,5]],"date-time":"2025-11-05T10:23:37Z","timestamp":1762338217515,"version":"3.41.2"},"reference-count":17,"publisher":"AIP Publishing","issue":"20","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,11,15]]},"abstract":"<jats:p>We study the effect of nitrogen on the GaAs0.9\u2212xNxSb0.1 (x=0.00, 0.65%, 1.06%, 1.45%, and 1.90%) alloy dielectric function by spectroscopic ellipsometry in the energy range from 0.73 to 4.75 eV. The compositional dependences of the critical points energies for the GaAs0.9\u2212xNxSb0.1 are obtained. In addition to the GaAs intrinsic transitions E1, E1+\u03941, and E0\u2032, the nitrogen-induced \u0393-point optical transitions E0 and E+, together with a third transition E#, are identified. We find that with increasing the N content, the E0 transition shifts to lower energies while the E+ and E# transitions shift to higher energies. We suggest that the origin of the E0, E+, and E# transitions may be explained by the double band anticrossing (BAC) model, consisting of a conduction BAC model and a valence BAC model.<\/jats:p>","DOI":"10.1063\/1.3518479","type":"journal-article","created":{"date-parts":[[2010,11,17]],"date-time":"2010-11-17T23:14:17Z","timestamp":1290035657000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":15,"title":["Effect of nitrogen on the GaAs0.9\u2212xNxSb0.1 dielectric function from the near-infrared to the ultraviolet"],"prefix":"10.1063","volume":"97","author":[{"given":"N.","family":"Ben Sedrine","sequence":"first","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e8m, Portugal"},{"name":"Centre de Recherche et de Technologie de l\u2019Energie 2 Laboratoire de Photovolta\u00efque de Semiconducteurs et de Nanostructures, , BP. 95, Hammam-Lif 2050, Tunisia"}]},{"given":"C.","family":"Bouhafs","sequence":"additional","affiliation":[{"name":"Centre de Recherche et de Technologie de l\u2019Energie 2 Laboratoire de Photovolta\u00efque de Semiconducteurs et de Nanostructures, , BP. 95, Hammam-Lif 2050, Tunisia"}]},{"given":"J. C.","family":"Harmand","sequence":"additional","affiliation":[{"name":"CNRS Route de Nozay 3 Laboratoire de Photonique et de Nanostructures, , 91 460 Marcoussis, France"}]},{"given":"R.","family":"Chtourou","sequence":"additional","affiliation":[{"name":"Centre de Recherche et de Technologie de l\u2019Energie 2 Laboratoire de Photovolta\u00efque de Semiconducteurs et de Nanostructures, , BP. 95, Hammam-Lif 2050, Tunisia"}]},{"given":"V.","family":"Darakchieva","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 1 , 2686-953 Sacav\u00e8m, Portugal"},{"name":"Link\u00f6ping University 4 Department of Physics, Chemistry, and Biology, , SE-581 83 Link\u00f6ping, Sweden"}]}],"member":"317","published-online":{"date-parts":[[2010,11,17]]},"reference":[{"key":"2023073109044024300_c1","doi-asserted-by":"publisher","first-page":"1254","DOI":"10.1063\/1.123516","volume":"74","year":"1999","journal-title":"Appl. Phys. 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