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The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV\/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15\u2002cm2\/V\u2009s.<\/jats:p>","DOI":"10.1063\/1.3525932","type":"journal-article","created":{"date-parts":[[2010,12,16]],"date-time":"2010-12-16T00:29:59Z","timestamp":1292459399000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":51,"title":["Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films"],"prefix":"10.1063","volume":"97","author":[{"given":"M.","family":"Lorenz","sequence":"first","affiliation":[{"name":"Universit\u00e4t Leipzig 1 Institut f\u00fcr Experimentelle Physik II, Fakult\u00e4t f\u00fcr Physik und Geowissenschaften, , Linn\u00e9strasse 5, 04103 Leipzig, Germany"}]},{"given":"A.","family":"Lajn","sequence":"additional","affiliation":[{"name":"Universit\u00e4t Leipzig 1 Institut f\u00fcr Experimentelle Physik II, Fakult\u00e4t f\u00fcr Physik und Geowissenschaften, , Linn\u00e9strasse 5, 04103 Leipzig, Germany"}]},{"given":"H.","family":"Frenzel","sequence":"additional","affiliation":[{"name":"Universit\u00e4t Leipzig 1 Institut f\u00fcr Experimentelle Physik II, Fakult\u00e4t f\u00fcr Physik und Geowissenschaften, , Linn\u00e9strasse 5, 04103 Leipzig, Germany"}]},{"given":"H.","family":"v. 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