{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,17]],"date-time":"2026-04-17T05:05:37Z","timestamp":1776402337932,"version":"3.51.2"},"reference-count":28,"publisher":"AIP Publishing","issue":"1","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2011,1,1]]},"abstract":"<jats:p>A detailed investigation of the crystallographic damage has been carried out in GaN following 300 keV rare earth ion implantation at room temperature by varying the fluence from 7\u00d71013 to 5\u00d71016\u2002at\/cm2. It is shown that above a threshold fluence around 2\u00d71015\u2002at\/cm2, nanocrystallization takes place from the surface, subsequent to the formation of a planar defects network consisting of basal and prismatic stacking faults. This network starts to form at the lowest analyzed fluence mostly around the mean projected range. When the fluence increases, it propagates toward the surface, reaching it just before the on-set of the nanocrystallization. A model based on the mechanical breakdown of the GaN wurtzite structure mediated by prismatic stacking faults is proposed.<\/jats:p>","DOI":"10.1063\/1.3527944","type":"journal-article","created":{"date-parts":[[2011,1,5]],"date-time":"2011-01-05T23:19:55Z","timestamp":1294269595000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":48,"title":["A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature"],"prefix":"10.1063","volume":"109","author":[{"given":"P.","family":"Ruterana","sequence":"first","affiliation":[{"name":"UCBN 1 CIMAP, UMR 6252, CNRS ENSICAEN, CEA, , 6 Boulevard du Mar\u00e9chal Juin, 14050 CAEN, France"}]},{"given":"B.","family":"Lacroix","sequence":"additional","affiliation":[{"name":"UCBN 1 CIMAP, UMR 6252, CNRS ENSICAEN, CEA, , 6 Boulevard du Mar\u00e9chal Juin, 14050 CAEN, France"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 2 , EN 10, 2686-953 Savac\u00e9m, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2011,1,5]]},"reference":[{"key":"2023070320333110600_c1","doi-asserted-by":"publisher","first-page":"1888","DOI":"10.1063\/1.1461884","volume":"80","year":"2002","journal-title":"Appl. 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