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The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2\u00d710\u22124\u2002cm2\/V\u2009s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3\u00d710\u22125\u2002cm2\/V\u2009s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required.<\/jats:p>","DOI":"10.1063\/1.3560982","type":"journal-article","created":{"date-parts":[[2011,3,10]],"date-time":"2011-03-10T00:13:08Z","timestamp":1299715988000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":3,"title":["Thin-film transistors based on poly(3,3\u2034-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability"],"prefix":"10.1063","volume":"98","author":[{"given":"Sara M. 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