{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T10:58:03Z","timestamp":1753873083827,"version":"3.41.2"},"reference-count":19,"publisher":"AIP Publishing","issue":"5","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2011,9,1]]},"abstract":"<jats:p>We used piezoresponse force microscopy (PFM) to study the dc bias field-induced domain structure of the (001) oriented single crystals of 0.77PbMg1\/3Nb2\/3O3-0.23PbSc1\/2Nb1\/2O3 relaxor. In the as-grown state, no polarization contrast was observed due to the average cubic symmetry of the crystal. Upon application of a dc bias applied via a PFM tip, a stable complex domain pattern, corresponding to a hedgehog-type topological defect, appeared on the surface of the crystal. The shape of these domains depended on the magnitude of the field. If the field was below a threshold, the domains possessed a cylindrical form. Above the threshold, the border between domains became close to a straight line. At high biases and large separation between the pulses, the development of the domains obeyed an avalanche-type dynamics.<\/jats:p>","DOI":"10.1063\/1.3624812","type":"journal-article","created":{"date-parts":[[2011,9,2]],"date-time":"2011-09-02T14:37:08Z","timestamp":1314974228000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":12,"title":["Local domain engineering in relaxor 0.77PbMg1\/3Nb2\/3O3-0.23PbSc1\/2Nb1\/2O3 single crystals"],"prefix":"10.1063","volume":"110","author":[{"given":"I. K.","family":"Bdikin","sequence":"first","affiliation":[{"name":"University of Aveiro 1 Department of Mechanical Engineering & TEMA, , 3810-193 Aveiro, Portugal"}]},{"given":"J.","family":"Gr\u00e1cio","sequence":"additional","affiliation":[{"name":"University of Aveiro 1 Department of Mechanical Engineering & TEMA, , 3810-193 Aveiro, Portugal"}]},{"given":"D. A.","family":"Kiselev","sequence":"additional","affiliation":[{"name":"National University of Science and Technology 2 \u201cMISIS\u201d 119049, Moscow, Russia"}]},{"given":"S. I.","family":"Raevskaya","sequence":"additional","affiliation":[{"name":"Southern Federal University 3 Physics Department, , 344090 Rostov on Don, Russia"}]},{"given":"I. P.","family":"Raevski","sequence":"additional","affiliation":[{"name":"Southern Federal University 3 Physics Department, , 344090 Rostov on Don, Russia"}]},{"given":"S. A.","family":"Prosandeev","sequence":"additional","affiliation":[{"name":"University of Arkansas 4 Physics Department, , Fayetteville, Arkansas 72701, USA"}]},{"given":"A. L.","family":"Kholkin","sequence":"additional","affiliation":[{"name":"University of Aveiro 5 Department of Ceramic and Glass Engineering & CICECO, , 3810-193 Aveiro, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2011,9,2]]},"reference":[{"key":"2023080501155328900_c1","doi-asserted-by":"publisher","first-page":"305","DOI":"10.1080\/00150199408244755","volume":"151","year":"1994","journal-title":"Ferroelectrics"},{"key":"2023080501155328900_c2","doi-asserted-by":"publisher","first-page":"R367","DOI":"10.1088\/0953-8984\/15\/9\/202","volume":"15","year":"2003","journal-title":"J. Phys.: Condens. Matter"},{"key":"2023080501155328900_c3a","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1063\/1.1609940","volume":"677","year":"2003","journal-title":"AIP Conf. 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