{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T10:57:53Z","timestamp":1753873073987,"version":"3.41.2"},"reference-count":25,"publisher":"AIP Publishing","issue":"6","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2011,9,15]]},"abstract":"<jats:p>We have studied hydrogen impurities and related structural properties in state-of-the-art wurtzite InN films with polar, nonpolar, and semipolar surface orientations. The effects of thermal annealing and chemical treatment on the incorporation and stability of H are also discussed. The near-surface and bulk hydrogen concentrations in the as-grown films increase when changing the surface orientation from (0001) to (0001\u00af) to (11\u00af01) and to (112\u00af0), which may be associated with a decrease in the grain size and change of the growth mode from 2D to 3D. Thermal annealing at 350oC in N2 leads to a reduction of H concentrations and the intrinsic levels of bulk H are found to correlate with the structural quality and defects in the annealed films.<\/jats:p>","DOI":"10.1063\/1.3642969","type":"journal-article","created":{"date-parts":[[2011,10,3]],"date-time":"2011-10-03T13:38:12Z","timestamp":1317649092000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":3,"title":["Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations"],"prefix":"10.1063","volume":"110","author":[{"given":"V.","family":"Darakchieva","sequence":"first","affiliation":[{"name":"Link\u00f6ping University 1 Department of Physics, Chemistry and Biology, , Link\u00f6ping SE-58183, Sweden"},{"name":"Instituto Tecnol\u00f3gico e Nuclear 2 , 2686-953 Sacav\u00e9m and CFNUL, Lisbon 1649-003, Portugal"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 2 , 2686-953 Sacav\u00e9m and CFNUL, Lisbon 1649-003, Portugal"}]},{"given":"M.-Y.","family":"Xie","sequence":"additional","affiliation":[{"name":"Link\u00f6ping University 1 Department of Physics, Chemistry and Biology, , Link\u00f6ping SE-58183, Sweden"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 2 , 2686-953 Sacav\u00e9m and CFNUL, Lisbon 1649-003, Portugal"}]},{"given":"C. L.","family":"Hsiao","sequence":"additional","affiliation":[{"name":"National Taiwan University 3 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"L. C.","family":"Chen","sequence":"additional","affiliation":[{"name":"National Taiwan University 3 Center for Condensed Matter Sciences, , Taipei 106, Taiwan"}]},{"given":"L. W.","family":"Tu","sequence":"additional","affiliation":[{"name":"National Sun Yat-Sen University 4 Department of Physics and Center for Nanoscience and Nanotechnology, , Kaohsiung 80424, Taiwan"}]},{"given":"W. 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