{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T10:56:59Z","timestamp":1753873019974,"version":"3.41.2"},"reference-count":12,"publisher":"AIP Publishing","issue":"18","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2011,10,31]]},"abstract":"<jats:p>We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content \u223c20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that \u201cseed\u201d InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with \u201cseeds\u201d nucleated on strain fields generated by the a-type edge dislocations.<\/jats:p>","DOI":"10.1063\/1.3658619","type":"journal-article","created":{"date-parts":[[2011,11,4]],"date-time":"2011-11-04T22:53:48Z","timestamp":1320447228000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":4,"title":["InGaN epilayer characterization by microfocused x-ray reciprocal space mapping"],"prefix":"10.1063","volume":"99","author":[{"given":"V.","family":"Kachkanov","sequence":"first","affiliation":[{"name":"1Diamond Light Source Ltd., Diamond House, Chilton, Didcot, Oxfordshire OX11 0DE, United Kingdom"}]},{"given":"I. P.","family":"Dolbnya","sequence":"additional","affiliation":[{"name":"1Diamond Light Source Ltd., Diamond House, Chilton, Didcot, Oxfordshire OX11 0DE, United Kingdom"}]},{"given":"K. P.","family":"O\u2019Donnell","sequence":"additional","affiliation":[{"name":"University of Strathclyde 2 Department of Physics, SUPA, , Glasgow, Scotland G4 0NG, United Kingdom"}]},{"given":"R. W.","family":"Martin","sequence":"additional","affiliation":[{"name":"University of Strathclyde 2 Department of Physics, SUPA, , Glasgow, Scotland G4 0NG, United Kingdom"}]},{"given":"P. R.","family":"Edwards","sequence":"additional","affiliation":[{"name":"University of Strathclyde 2 Department of Physics, SUPA, , Glasgow, Scotland G4 0NG, United Kingdom"}]},{"given":"S.","family":"Pereira","sequence":"additional","affiliation":[{"name":"University of Aveiro 3 Department of Physics, CICECO, , 3810-193 Aveiro, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2011,11,4]]},"reference":[{"key":"2023070316013105800_c1","doi-asserted-by":"publisher","first-page":"L8","DOI":"10.1143\/JJAP.32.L8","volume":"32","year":"1993","journal-title":"Jpn. J. Appl. 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