{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T18:01:02Z","timestamp":1774980062155,"version":"3.50.1"},"reference-count":36,"publisher":"AIP Publishing","issue":"4","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2012,2,15]]},"abstract":"<jats:p>We report on the solid-phase reaction of thin Ni-rare earth films on a Si(100) substrate, for a variety of rare earth (RE) elements (Y, Gd, Dy, and Er). Both interlayer (Ni\/RE\/\u3008Si\u3009) and alloy (Ni-RE\/\u3008Si\u3009) configurations were studied. The phase sequence during reaction was revealed using real-time x-ray diffraction whereas the elemental diffusion and growth kinetics were examined by real-time Rutherford backscattering spectrometry. All RE elements studied exert a similar influence on the solid phase reaction. Independent of the RE element or its initial distribution a ternary Ni2Si2RE phase forms, which ends up at the surface after NiSi growth. With respect to growth kinetics, the RE metal addition hampers the Ni diffusion process even for low concentrations of 2.5 at. %, resulting in the simultaneous growth of Ni-rich silicide and NiSi. Moreover, the formation of Ni2Si2RE during NiSi growth alters the Ni diffusion mechanism in the interlayer causing a sudden acceleration of the Ni silicide growth. Besides a significant effect on the silicide growth, we have found that adding 5 at. % Er (relative to Ni) lowers the NiSi Schottky barrier height on n-type Si(100) by approximately 0.1\u2009eV for the interlayer and alloy configuration.<\/jats:p>","DOI":"10.1063\/1.3681331","type":"journal-article","created":{"date-parts":[[2012,2,22]],"date-time":"2012-02-22T00:40:32Z","timestamp":1329871232000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":8,"title":["<i>In situ<\/i> study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)"],"prefix":"10.1063","volume":"111","author":[{"given":"J.","family":"Demeulemeester","sequence":"first","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K.U. Leuven 1 , Celestijnenlaan 200D, B-3001 Leuven, Belgium"}]},{"given":"W.","family":"Knaepen","sequence":"additional","affiliation":[{"name":"Ghent University 2 Department of Solid State Sciences, , 9000 Gent, Belgium"}]},{"given":"D.","family":"Smeets","sequence":"additional","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K.U. Leuven 1 , Celestijnenlaan 200D, B-3001 Leuven, Belgium"}]},{"given":"A.","family":"Schrauwen","sequence":"additional","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K.U. Leuven 1 , Celestijnenlaan 200D, B-3001 Leuven, Belgium"}]},{"given":"C. M.","family":"Comrie","sequence":"additional","affiliation":[{"name":"University of Cape Town 3 Department of Physics, , Rondebosch 7700, South Africa"}]},{"given":"N. P.","family":"Barradas","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 4 , Estrada Nacional 10, Apartado 21, 2686-953, Sacav\u00e9m, Portugal and , Av., Prof. Gama Pinto 2, 1699 Lisboa Codex, Portugal"},{"name":"Centro de Fisica Nuclear da Universidade de Lisboa 4 , Estrada Nacional 10, Apartado 21, 2686-953, Sacav\u00e9m, Portugal and , Av., Prof. Gama Pinto 2, 1699 Lisboa Codex, Portugal"}]},{"given":"A.","family":"Vieira","sequence":"additional","affiliation":[{"name":"Instituto Superior de Engenharia do Porto 5 , Rua S. Tome, 4200 Porto, Portugal"}]},{"given":"C.","family":"Detavernier","sequence":"additional","affiliation":[{"name":"Ghent University 2 Department of Solid State Sciences, , 9000 Gent, Belgium"}]},{"given":"K.","family":"Temst","sequence":"additional","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K.U. Leuven 1 , Celestijnenlaan 200D, B-3001 Leuven, Belgium"}]},{"given":"A.","family":"Vantomme","sequence":"additional","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K.U. Leuven 1 , Celestijnenlaan 200D, B-3001 Leuven, Belgium"}]}],"member":"317","published-online":{"date-parts":[[2012,2,21]]},"reference":[{"key":"2023080423584531500_c1","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1080\/10408430390802431","volume":"28","year":"2003","journal-title":"Crit. Rev. Solid State Mater. Sci."},{"key":"2023080423584531500_c2","doi-asserted-by":"publisher","first-page":"062108","DOI":"10.1063\/1.1863442","volume":"86","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"2023080423584531500_c3","doi-asserted-by":"publisher","first-page":"349","DOI":"10.1016\/j.mee.2004.07.037","volume":"76","year":"2004","journal-title":"Microelectron. Eng."},{"key":"2023080423584531500_c4","doi-asserted-by":"publisher","first-page":"626","DOI":"10.1063\/1.92457","volume":"38","year":"1981","journal-title":"Appl. Phys. Lett."},{"key":"2023080423584531500_c5","doi-asserted-by":"publisher","first-page":"265","DOI":"10.1016\/0040-6090(82)90131-6","volume":"93","year":"1982","journal-title":"Thin Solid Films"},{"key":"2023080423584531500_c6","doi-asserted-by":"publisher","first-page":"2120","DOI":"10.1016\/j.apsusc.2007.08.081","volume":"254","year":"2008","journal-title":"Appl. Surf. Sci."},{"key":"2023080423584531500_c7","doi-asserted-by":"publisher","first-page":"245","DOI":"10.1007\/s11664-007-0339-6","volume":"37","year":"2008","journal-title":"J. Electron. Mater."},{"key":"2023080423584531500_c8","doi-asserted-by":"publisher","first-page":"2841","DOI":"10.1063\/1.329015","volume":"52","year":"1981","journal-title":"J. Appl. Phys."},{"key":"2023080423584531500_c9","doi-asserted-by":"publisher","first-page":"77","DOI":"10.1063\/1.93295","volume":"41","year":"1982","journal-title":"Appl. Phys. Lett."},{"key":"2023080423584531500_c10","doi-asserted-by":"publisher","first-page":"4208","DOI":"10.1063\/1.333021","volume":"55","year":"1984","journal-title":"J. Appl. Phys."},{"key":"2023080423584531500_c11","doi-asserted-by":"publisher","first-page":"225","DOI":"10.1016\/0040-6090(82)90130-4","volume":"93","year":"1982","journal-title":"Thin Solid Films"},{"key":"2023080423584531500_c12","doi-asserted-by":"publisher","first-page":"213","DOI":"10.1016\/S0168-583X(97)00946-4","volume":"139","year":"1998","journal-title":"Nucl. Instrum. Methods B"},{"key":"2023080423584531500_c13","doi-asserted-by":"publisher","first-page":"1676","DOI":"10.1016\/j.nimb.2010.02.127","volume":"268","year":"2010","journal-title":"Nucl. Instrum. Methods B"},{"key":"2023080423584531500_c14","volume-title":"Neural Networks for Pattern Recognition","year":"1995"},{"key":"2023080423584531500_c15","doi-asserted-by":"publisher","first-page":"5818","DOI":"10.1103\/PhysRevE.62.5818","volume":"62","year":"2000","journal-title":"Phys. Rev. E"},{"key":"2023080423584531500_c16","doi-asserted-by":"publisher","first-page":"291","DOI":"10.1063\/1.119524","volume":"71","year":"1997","journal-title":"Appl. Phys. Lett."},{"key":"2023080423584531500_c17","doi-asserted-by":"publisher","first-page":"501","DOI":"10.1063\/1.89230","volume":"30","year":"1977","journal-title":"Appl. Phys. Lett."},{"key":"2023080423584531500_c18","doi-asserted-by":"publisher","first-page":"223","DOI":"10.1002\/pssa.v63:1","volume":"63","year":"1981","journal-title":"Phys. Status Solidi A"},{"key":"2023080423584531500_c19","doi-asserted-by":"publisher","first-page":"283","DOI":"10.1016\/0040-6090(85)90080-X","volume":"128","year":"1985","journal-title":"Thin Solid Films"},{"key":"2023080423584531500_c20","doi-asserted-by":"publisher","first-page":"093515","DOI":"10.1063\/1.3327451","volume":"107","year":"2010","journal-title":"J. Appl. Phys."},{"key":"2023080423584531500_c21","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1016\/0921-5093(93)90348-I","volume":"167","year":"1993","journal-title":"Mater. Sci. Eng."},{"key":"2023080423584531500_c22","doi-asserted-by":"publisher","first-page":"2510","DOI":"10.1063\/1.1545156","volume":"93","year":"2003","journal-title":"J. Appl. Phys."},{"key":"2023080423584531500_c23","doi-asserted-by":"publisher","first-page":"85","DOI":"10.1016\/0956-716X(92)90374-N","volume":"26","year":"1992","journal-title":"Scr. Metall. Mater."},{"key":"2023080423584531500_c24","doi-asserted-by":"publisher","first-page":"115","DOI":"10.1016\/S0921-5107(00)00344-5","volume":"R29","year":"2000","journal-title":"Mater. Sci. Eng."},{"key":"2023080423584531500_c25","doi-asserted-by":"publisher","first-page":"3252","DOI":"10.1063\/1.331028","volume":"53","year":"1982","journal-title":"J. Appl. Phys."},{"key":"2023080423584531500_c26","doi-asserted-by":"publisher","first-page":"3882","DOI":"10.1063\/1.356033","volume":"75","year":"1994","journal-title":"J. Appl. Phys."},{"key":"2023080423584531500_c27","doi-asserted-by":"publisher","first-page":"20","DOI":"10.1116\/1.3259875","volume":"28","year":"2010","journal-title":"J. Vac. Sci. Technol. A"},{"key":"2023080423584531500_c28","doi-asserted-by":"publisher","first-page":"373","DOI":"10.1016\/j.scriptamat.2007.05.007","volume":"57","year":"2007","journal-title":"Scr. Mater."},{"key":"2023080423584531500_c29","volume-title":"Metal-Semiconductor Contacts","year":"1988"},{"key":"2023080423584531500_c30","doi-asserted-by":"publisher","first-page":"594","DOI":"10.1063\/1.91559","volume":"36","year":"1980","journal-title":"Appl. Phys. Lett."},{"key":"2023080423584531500_c31","doi-asserted-by":"publisher","first-page":"535","DOI":"10.1063\/1.92442","volume":"38","year":"1981","journal-title":"Appl. Phys. Lett."},{"key":"2023080423584531500_c32","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1080\/10408439991329161","volume":"24","year":"1999","journal-title":"Crit. Rev. Solid State Mater. Sci."},{"key":"2023080423584531500_c33","doi-asserted-by":"publisher","first-page":"403","DOI":"10.1007\/s11669-997-0073-z","volume":"18","year":"1997","journal-title":"J. Phase Equilib."},{"key":"2023080423584531500_c34","doi-asserted-by":"crossref","first-page":"596","DOI":"10.1007\/s12385-001-0091-1","volume":"22","year":"2001","journal-title":"J. Phase Equilib."},{"key":"2023080423584531500_c35","doi-asserted-by":"publisher","first-page":"307","DOI":"10.1016\/0022-5088(86)90691-0","volume":"119","year":"1986","journal-title":"J. Less-Common Met."},{"key":"2023080423584531500_c36","doi-asserted-by":"publisher","first-page":"043505","DOI":"10.1063\/1.3455873","volume":"108","year":"2010","journal-title":"J. Appl. Phys."}],"container-title":["Journal of Applied Physics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.3681331\/15081265\/043511_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.3681331\/15081265\/043511_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,4]],"date-time":"2023-08-04T23:58:58Z","timestamp":1691193538000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/jap\/article\/111\/4\/043511\/989498\/In-situ-study-of-the-growth-properties-of-Ni-rare"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,2,15]]},"references-count":36,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2012,2,15]]}},"URL":"https:\/\/doi.org\/10.1063\/1.3681331","relation":{},"ISSN":["0021-8979","1089-7550"],"issn-type":[{"value":"0021-8979","type":"print"},{"value":"1089-7550","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2012,2,15]]},"published":{"date-parts":[[2012,2,15]]},"article-number":"043511"}}