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Criteria for the appearance of localized states on clusters of impurity scatterers and for qualitative restructuring of the band spectrum are established and the possibility of a distinctive metal\/insulator transition when vacancies are present is discussed.<\/jats:p>","DOI":"10.1063\/1.4743562","type":"journal-article","created":{"date-parts":[[2012,8,24]],"date-time":"2012-08-24T23:15:45Z","timestamp":1345850145000},"page":"792-798","update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":2,"title":["Impurity and vacancy effects in graphene"],"prefix":"10.1063","volume":"38","author":[{"given":"V. M.","family":"Loktev","sequence":"first","affiliation":[{"name":"Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine , 14b Metrolohichna Str., Kiev 03680, Ukraine"}]},{"given":"Yu. 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