{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T22:27:17Z","timestamp":1759184837408,"version":"3.41.2"},"reference-count":31,"publisher":"AIP Publishing","issue":"7","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2012,10,1]]},"abstract":"<jats:p>Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.<\/jats:p>","DOI":"10.1063\/1.4754448","type":"journal-article","created":{"date-parts":[[2012,10,3]],"date-time":"2012-10-03T01:28:34Z","timestamp":1349227714000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":14,"title":["Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies"],"prefix":"10.1063","volume":"112","author":[{"given":"J.","family":"Crocco","sequence":"first","affiliation":[{"name":"Crystal Growth Laboratory, Universidad Autonoma de Madrid 1 , Madrid Spain"}]},{"given":"H.","family":"Bensalah","sequence":"additional","affiliation":[{"name":"Crystal Growth Laboratory, Universidad Autonoma de Madrid 1 , Madrid Spain"}]},{"given":"Q.","family":"Zheng","sequence":"additional","affiliation":[{"name":"Crystal Growth Laboratory, Universidad Autonoma de Madrid 1 , Madrid Spain"}]},{"given":"V.","family":"Corregidor","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear UFA 2 , Sacavem, Portugal"}]},{"given":"E.","family":"Avles","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear UFA 2 , Sacavem, Portugal"}]},{"given":"A.","family":"Castaldini","sequence":"additional","affiliation":[{"name":"PHoS Laboratory, Department of Physics, University of Bologna 3 , Bologna, Italy"}]},{"given":"B.","family":"Fraboni","sequence":"additional","affiliation":[{"name":"PHoS Laboratory, Department of Physics, University of Bologna 3 , Bologna, Italy"}]},{"given":"D.","family":"Cavalcoli","sequence":"additional","affiliation":[{"name":"PHoS Laboratory, Department of Physics, University of Bologna 3 , Bologna, Italy"}]},{"given":"A.","family":"Cavallini","sequence":"additional","affiliation":[{"name":"PHoS Laboratory, Department of Physics, University of Bologna 3 , Bologna, Italy"}]},{"given":"O.","family":"Vela","sequence":"additional","affiliation":[{"name":"Centro de Investigaci\u00f3n Energ\u00e9ticas Medioambientales y Tecnol\u00f3gicas 4 (CIEMAT), Madrid, Spain"}]},{"given":"E.","family":"Dieguez","sequence":"additional","affiliation":[{"name":"Crystal Growth Laboratory, Universidad Autonoma de Madrid 1 , Madrid Spain"}]}],"member":"317","published-online":{"date-parts":[[2012,10,2]]},"reference":[{"issue":"9","key":"2023070414385674900_c1","doi-asserted-by":"publisher","first-page":"1356","DOI":"10.1007\/s11664-008-0431-6","article-title":"Effects of surface processing on the response of CZT gamma detectors: Studies with a collimated synchrotron x-ray beam","volume":"37","year":"2008","journal-title":"J. Electron. Mater."},{"key":"2023070414385674900_c2","doi-asserted-by":"publisher","first-page":"3509","DOI":"10.1063\/1.363222","article-title":"Low-temperature photoluminescence of detector grade Cd1\u2013xZnxTe crystal treated by different chemical etchants","volume":"80","year":"1996","journal-title":"J. Appl. Phys."},{"key":"2023070414385674900_c3","doi-asserted-by":"publisher","first-page":"1935","DOI":"10.1109\/TNS.2011.2157703","article-title":"Study of the effects of edge morphology on detector performance by leakage current and cathodoluminescence","volume":"58","year":"2011","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"5","key":"2023070414385674900_c4","doi-asserted-by":"publisher","first-page":"2521","DOI":"10.1109\/TNS.2002.803852","article-title":"Effects of chemical etching on (111) oriented CdZnTe nuclear radiation detectors","volume":"49","year":"2002","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"9","key":"2023070414385674900_c5","doi-asserted-by":"publisher","first-page":"1438","DOI":"10.1007\/s11664-008-0448-x","article-title":"Light-induced tellurium enrichment on CdZnTe crystal detected by Raman spectroscopy","volume":"37","year":"2008","journal-title":"J. Electron. Mater."},{"key":"2023070414385674900_c6","doi-asserted-by":"publisher","first-page":"596","DOI":"10.1016\/0169-4332(96)00346-7","article-title":"Surface barriers formation mechanisms of the chemically etched CdTe(111) polar surfaces and gold interfaces","volume":"100","year":"1996","journal-title":"Appl. Surf. Sci."},{"key":"2023070414385674900_c7","doi-asserted-by":"publisher","first-page":"014510","DOI":"10.1063\/1.3459859","article-title":"Surface current reduction in 211 oriented CdZnTe crystals by Ar bombardment","volume":"108","year":"2010","journal-title":"J. Appl. Phys."},{"key":"2023070414385674900_c8","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1016\/0022-0248(90)90968-Q","article-title":"The absolute determination of CdTe crystal polarity","volume":"101","year":"1990","journal-title":"J. Cryst. Growth"},{"key":"2023070414385674900_c9","doi-asserted-by":"publisher","first-page":"8742","DOI":"10.1016\/j.apsusc.2011.05.098","article-title":"Influence of surface preparation on CdZnTe nuclear radiation detectors","volume":"257","year":"2011","journal-title":"Appl. Surf. Sci."},{"key":"2023070414385674900_c10","doi-asserted-by":"publisher","first-page":"1131","DOI":"10.1002\/crat.201100268","article-title":"Comparison of radiation detector performance for different metal contacts on CdZnTe deposited by electroless deposition method","volume":"46","year":"2011","journal-title":"Cryst. Res. Technol."},{"volume-title":"Appl. Surf. Sci.","key":"2023070414385674900_c11","article-title":"Detector surface preparation of CdZnTe for electrode patterning"},{"key":"2023070414385674900_c12","doi-asserted-by":"publisher","first-page":"4006","DOI":"10.1063\/1.341361","article-title":"Photoinduced current transient spectroscopy in high-resistivity bulk materials: Instrumentation and methodology","volume":"64","year":"1988","journal-title":"J. Appl. Phys."},{"key":"2023070414385674900_c13","doi-asserted-by":"publisher","first-page":"225","DOI":"10.1016\/S0927-0248(02)00276-3","article-title":"Photo-induced current transient spectroscopic study of the traps in CdTe","volume":"76","year":"2003","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"2023070414385674900_c14","doi-asserted-by":"publisher","first-page":"173","DOI":"10.1016\/S0921-5107(01)00513-X","article-title":"Real defect concentration measurements of nuclear detectormaterials by the combination of PICTS and SCLC methods","volume":"83","year":"2001","journal-title":"Mater. Sci. Eng. B"},{"key":"2023070414385674900_c15","doi-asserted-by":"publisher","first-page":"291","DOI":"10.1063\/1.119524","article-title":"Simulated annealing analysis of Rutherford backscattering data","volume":"71","year":"1997","journal-title":"Appl. Phys. Lett."},{"key":"2023070414385674900_c16","doi-asserted-by":"publisher","first-page":"201","DOI":"10.1016\/0169-4332(94)90303-4","article-title":"Determination of undoped CdTe(111) surface polarity by surface photovoltage spectrsocopy","volume":"74","year":"1994","journal-title":"Appl. Surf. Sci."},{"key":"2023070414385674900_c17","doi-asserted-by":"publisher","first-page":"043713","DOI":"10.1063\/1.2885350","article-title":"Surface photovoltage spectroscopy analyses of CZT","volume":"103","year":"2008","journal-title":"J. Appl. Phys."},{"key":"2023070414385674900_c18","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/S0167-5729(99)00002-3","article-title":"Surface photovoltage phenomena: Theory, experiment, and applications","volume":"37","year":"1999","journal-title":"Surf. Sci. Rep."},{"key":"2023070414385674900_c19","doi-asserted-by":"publisher","first-page":"4","DOI":"10.1063\/1.366946","article-title":"Deep energy levels in CdTe and CdZnTe","volume":"83","year":"1998","journal-title":"J. Appl. Phys."},{"key":"2023070414385674900_c20","doi-asserted-by":"publisher","first-page":"7622","DOI":"10.1103\/PhysRevB.54.7622","article-title":"Cathodoluminescence and photoinduced current transient spectroscopy studies of defects in Cd0.8Zn0.2Te","volume":"54","year":"1996","journal-title":"Phys. Rev. B"},{"issue":"1","key":"2023070414385674900_c21","article-title":"Properties of CdZnTe crystals grown by high pressure Bridgman","volume":"2","year":"1999","journal-title":"M. J. Condens. Matter"},{"key":"2023070414385674900_c22","doi-asserted-by":"publisher","first-page":"38","DOI":"10.1016\/S0168-9002(98)01578-2","article-title":"CdTe and CdZnTe for nuclear detectors: Facts and fictions","volume":"428","year":"1999","journal-title":"Nucl. Instrum. Methods Phys. Res. A"},{"issue":"3","key":"2023070414385674900_c23","doi-asserted-by":"publisher","first-page":"1176","DOI":"10.1109\/TNS.2004.829658","article-title":"Defect structure of high resistive CdTe:In prepared by vertical gradient freeze","volume":"51","year":"2004","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"4","key":"2023070414385674900_c24","doi-asserted-by":"publisher","first-page":"428","DOI":"10.1016\/0022-0248(88)90203-5","article-title":"Effects of copper in high resistivity CdTe","volume":"89","year":"1988","journal-title":"J. Cryst. Growth"},{"issue":"1","key":"2023070414385674900_c25","doi-asserted-by":"publisher","first-page":"457","DOI":"10.1063\/1.329947","article-title":"Detailed characterization of deep centers in CdTe: Photoionization and thermal ionization properties","volume":"53","year":"1982","journal-title":"J. Appl. Phys."},{"issue":"5","key":"2023070414385674900_c26","doi-asserted-by":"publisher","first-page":"3135","DOI":"10.1063\/1.1600529","article-title":"Defective states induced in CdTe and CdZnTe detectors by high and low energy neutron irradiation","volume":"94","year":"2003","journal-title":"J. Appl. Phys."},{"issue":"3","key":"2023070414385674900_c27","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1007\/s11664-010-1504-x","article-title":"Point defects in CdZnTe crystals grown by different techniques","volume":"40","year":"2011","journal-title":"J. Electron. Mater."},{"issue":"2","key":"2023070414385674900_c28","doi-asserted-by":"publisher","first-page":"703","DOI":"10.1063\/1.1425071","article-title":"Alloy composition and electronic structure of CZT by surface photovoltage spectroscopy","volume":"91","year":"2002","journal-title":"J. Appl. Phys."},{"key":"2023070414385674900_c29","doi-asserted-by":"publisher","first-page":"073705","DOI":"10.1063\/1.3093697","article-title":"Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization","volume":"105","year":"2009","journal-title":"J. Appl. Phys."},{"key":"2023070414385674900_c30","doi-asserted-by":"publisher","first-page":"231","DOI":"10.1016\/0039-6028(93)91150-N","article-title":"X-ray photoelectron spectroscopy and atomic force microscopy characterization of the effects of etching ZnxCd1\u2013xTe surfaces","volume":"296","year":"1993","journal-title":"Surf. Sci."},{"key":"2023070414385674900_c31","doi-asserted-by":"publisher","first-page":"053714","DOI":"10.1063\/1.3211325","article-title":"The study of work function of CdZnTe with different surface states by synchrotron radiation photoemission spectroscopy","volume":"106","year":"2009","journal-title":"J. Appl. Phys."}],"container-title":["Journal of Applied Physics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.4754448\/15101390\/074503_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.4754448\/15101390\/074503_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,7,4]],"date-time":"2023-07-04T17:23:34Z","timestamp":1688491414000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/jap\/article\/112\/7\/074503\/369251\/Study-of-asymmetries-of-Cd-Zn-Te-devices"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,10,1]]},"references-count":31,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2012,10,1]]}},"URL":"https:\/\/doi.org\/10.1063\/1.4754448","relation":{},"ISSN":["0021-8979","1089-7550"],"issn-type":[{"type":"print","value":"0021-8979"},{"type":"electronic","value":"1089-7550"}],"subject":[],"published-other":{"date-parts":[[2012,10,1]]},"published":{"date-parts":[[2012,10,1]]},"article-number":"074503"}}