{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,25]],"date-time":"2026-04-25T05:03:48Z","timestamp":1777093428564,"version":"3.51.4"},"reference-count":25,"publisher":"AIP Publishing","issue":"19","funder":[{"DOI":"10.13039\/100000161","name":"National Institute of Standards and Technology","doi-asserted-by":"publisher","award":["70NANB11H165"],"award-info":[{"award-number":["70NANB11H165"]}],"id":[{"id":"10.13039\/100000161","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000183","name":"Army Research Office","doi-asserted-by":"publisher","award":["W911NF-09-C-0097"],"award-info":[{"award-number":["W911NF-09-C-0097"]}],"id":[{"id":"10.13039\/100000183","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2012,11,5]]},"abstract":"<jats:p>The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN\/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300\u2009K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22\u00b10.01)m0 at 1.5\u2009K to (0.36\u00b10.03)m0 at 300\u2009K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.<\/jats:p>","DOI":"10.1063\/1.4765351","type":"journal-article","created":{"date-parts":[[2012,11,7]],"date-time":"2012-11-07T14:24:07Z","timestamp":1352298247000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":51,"title":["Temperature dependent effective mass in AlGaN\/GaN high electron mobility transistor structures"],"prefix":"10.1063","volume":"101","author":[{"given":"T.","family":"Hofmann","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln 1 , Nebraska 68588-0511, USA"}]},{"given":"P.","family":"K\u00fchne","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln 1 , Nebraska 68588-0511, USA"}]},{"given":"S.","family":"Sch\u00f6che","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln 1 , Nebraska 68588-0511, USA"}]},{"given":"Jr-Tai","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Physics, Chemistry and Biology, IFM, University of Link\u00f6ping 2 , Link\u00f6ping, Sweden"}]},{"given":"U.","family":"Forsberg","sequence":"additional","affiliation":[{"name":"Department of Physics, Chemistry and Biology, IFM, University of Link\u00f6ping 2 , Link\u00f6ping, Sweden"}]},{"given":"E.","family":"Janz\u00e9n","sequence":"additional","affiliation":[{"name":"Department of Physics, Chemistry and Biology, IFM, University of Link\u00f6ping 2 , Link\u00f6ping, Sweden"}]},{"given":"N.","family":"Ben Sedrine","sequence":"additional","affiliation":[{"name":"Department of Physics, Chemistry and Biology, IFM, University of Link\u00f6ping 2 , Link\u00f6ping, Sweden"},{"name":"IST\/ITN Instituto Superior T\u00e9cnico, Universidade T\u00e9cnica de Lisboa 3 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"C. 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