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The time-temperature profiles of ribbons grown at different velocities were investigated using direct measurements and computational fluid dynamics (CFD) modeling. Residual stresses up to 20\u2009MPa were measured using infrared birefringence imaging. The effect of crystallization speed on dislocation density and residual stress is discussed from the context of thermal stresses during growth. More broadly, we demonstrate the usefulness of combining spatially resolved stress and microstructure measurements with CFD simulations toward optimizing kerfless silicon wafer quality.<\/jats:p>","DOI":"10.1063\/1.4793319","type":"journal-article","created":{"date-parts":[[2013,2,26]],"date-time":"2013-02-26T00:00:43Z","timestamp":1361836843000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":15,"title":["Residual stress and dislocations density in silicon ribbons grown via optical zone melting"],"prefix":"10.1063","volume":"113","author":[{"given":"A.","family":"Augusto","sequence":"first","affiliation":[{"name":"Faculdade de Ci\u00eancias da Universidade de Lisboa 1 , 1749\u2013016 Lisboa, Portugal"}]},{"given":"D.","family":"Pera","sequence":"additional","affiliation":[{"name":"Faculdade de Ci\u00eancias da Universidade de Lisboa 1 , 1749\u2013016 Lisboa, Portugal"}]},{"given":"H. 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