{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T11:00:14Z","timestamp":1753873214192,"version":"3.41.2"},"reference-count":20,"publisher":"AIP Publishing","issue":"15","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2013,4,15]]},"abstract":"<jats:p>Aluminum\/Al2O3\/polymer\/metal capacitors submitted to a low-power constant current stress undergo dielectric breakdown. The post-breakdown conduction is metastable, and over time the capacitors recover their original insulating properties. The decay of the conduction with time follows a power law (1\/t)\u03b1. The magnitude of the exponent \u03b1 can be raised by application of an electric field and lowered to practically zero by optical excitation of the polyspirofluorene polymer. The metastable conduction is attributed to formation of metastable pairs of oppositely charged defects across the oxide-polymer interface, and the self-healing is related to resistive switching.<\/jats:p>","DOI":"10.1063\/1.4802485","type":"journal-article","created":{"date-parts":[[2013,4,18]],"date-time":"2013-04-18T22:10:36Z","timestamp":1366323036000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":4,"title":["Reversible post-breakdown conduction in aluminum oxide-polymer capacitors"],"prefix":"10.1063","volume":"102","author":[{"given":"Qian","family":"Chen","sequence":"first","affiliation":[{"name":"Instituto de Telecomunica\u00e7\u00f5es 1 , Av. Rovisco Pais 1, 1049-001 Lisboa, Portugal"},{"name":"Universidade do Algarve 2 , Campus de Gambelas, 8005-139 Faro, Portugal"}]},{"given":"Henrique L.","family":"Gomes","sequence":"additional","affiliation":[{"name":"Instituto de Telecomunica\u00e7\u00f5es 1 , Av. Rovisco Pais 1, 1049-001 Lisboa, Portugal"},{"name":"Universidade do Algarve 2 , Campus de Gambelas, 8005-139 Faro, Portugal"}]},{"given":"Paulo R. F.","family":"Rocha","sequence":"additional","affiliation":[{"name":"Instituto de Telecomunica\u00e7\u00f5es 1 , Av. Rovisco Pais 1, 1049-001 Lisboa, Portugal"},{"name":"Universidade do Algarve 2 , Campus de Gambelas, 8005-139 Faro, Portugal"}]},{"given":"Dago M.","family":"de Leeuw","sequence":"additional","affiliation":[{"name":"Max Planck Institut for Polymer Research 3 , Ackermannweg 10, D-55128 Mainz, Germany"}]},{"given":"Stefan C. J.","family":"Meskers","sequence":"additional","affiliation":[{"name":"Molecular Materials and Nanosystems, Eindhoven University of Technology 4 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"}]}],"member":"317","published-online":{"date-parts":[[2013,4,18]]},"reference":[{"key":"2023062318193140200_c1","doi-asserted-by":"publisher","first-page":"1099","DOI":"10.1109\/PROC.1971.8337","volume":"59","year":"1971","journal-title":"Proc. IEEE"},{"key":"2023062318193140200_c2","doi-asserted-by":"publisher","first-page":"323","DOI":"10.1016\/0378-4371(94)90390-5","volume":"207","year":"1994","journal-title":"Physica A"},{"year":"2003","key":"2023062318193140200_c3"},{"key":"2023062318193140200_c4","doi-asserted-by":"publisher","first-page":"6382","DOI":"10.1063\/1.371701","volume":"86","year":"1999","journal-title":"J. Appl. Phys."},{"key":"2023062318193140200_c5","doi-asserted-by":"publisher","first-page":"083712","DOI":"10.1063\/1.2354325","volume":"100","year":"2006","journal-title":"J. Appl. Phys."},{"key":"2023062318193140200_c6","doi-asserted-by":"publisher","first-page":"1925","DOI":"10.1016\/j.mee.2009.03.132","volume":"86","year":"2009","journal-title":"Microelectron. Eng."},{"key":"2023062318193140200_c7","doi-asserted-by":"publisher","first-page":"6940","DOI":"10.1063\/1.1812584","volume":"96","year":"2004","journal-title":"J. Appl. Phys."},{"key":"2023062318193140200_c8","doi-asserted-by":"publisher","first-page":"455702","DOI":"10.1088\/0957-4484\/22\/45\/455702","volume":"22","year":"2011","journal-title":"Nanotechnology"},{"key":"2023062318193140200_c9","doi-asserted-by":"publisher","first-page":"5351","DOI":"10.1063\/1.1318369","volume":"88","year":"2000","journal-title":"J. Appl. Phys."},{"key":"2023062318193140200_c10","doi-asserted-by":"publisher","first-page":"121301","DOI":"10.1063\/1.2147714","volume":"98","year":"2005","journal-title":"J. Appl. Phys."},{"key":"2023062318193140200_c11","doi-asserted-by":"publisher","first-page":"172901","DOI":"10.1063\/1.3416912","volume":"96","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"2023062318193140200_c12","doi-asserted-by":"publisher","first-page":"1024","DOI":"10.1016\/j.microrel.2009.06.029","volume":"49","year":"2009","journal-title":"Microelectron. Reliab."},{"key":"2023062318193140200_c13","doi-asserted-by":"publisher","first-page":"543","DOI":"10.1109\/LED.2010.2045732","volume":"31","year":"2010","journal-title":"IEEE Electron Device Lett."},{"key":"2023062318193140200_c14","doi-asserted-by":"publisher","first-page":"202903","DOI":"10.1063\/1.3429682","volume":"96","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"2023062318193140200_c15","doi-asserted-by":"publisher","first-page":"193202","DOI":"10.1103\/PhysRevB.81.193202","volume":"81","year":"2010","journal-title":"Phys. Rev. B"},{"key":"2023062318193140200_c16","doi-asserted-by":"publisher","first-page":"063708","DOI":"10.1063\/1.3695456","volume":"111","year":"2012","journal-title":"J. Appl. Phys."},{"key":"2023062318193140200_c17","doi-asserted-by":"publisher","first-page":"103719","DOI":"10.1063\/1.3262619","volume":"106","year":"2009","journal-title":"J. Appl. Phys."},{"key":"2023062318193140200_c18","doi-asserted-by":"publisher","first-page":"083305","DOI":"10.1063\/1.3628301","volume":"99","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"2023062318193140200_c19","doi-asserted-by":"publisher","first-page":"12443","DOI":"10.1021\/jp302767y","volume":"116","year":"2012","journal-title":"J. Phys. Chem. C"},{"key":"2023062318193140200_c20","doi-asserted-by":"publisher","first-page":"14804","DOI":"10.1021\/jp104846h","volume":"114","year":"2010","journal-title":"J. Phys. Chem. C"}],"container-title":["Applied Physics Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.4802485\/14270511\/153509_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.4802485\/14270511\/153509_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,24]],"date-time":"2023-06-24T08:36:15Z","timestamp":1687595775000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/apl\/article\/102\/15\/153509\/126182\/Reversible-post-breakdown-conduction-in-aluminum"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,4,15]]},"references-count":20,"journal-issue":{"issue":"15","published-print":{"date-parts":[[2013,4,15]]}},"URL":"https:\/\/doi.org\/10.1063\/1.4802485","relation":{},"ISSN":["0003-6951","1077-3118"],"issn-type":[{"type":"print","value":"0003-6951"},{"type":"electronic","value":"1077-3118"}],"subject":[],"published-other":{"date-parts":[[2013,4,15]]},"published":{"date-parts":[[2013,4,15]]},"article-number":"153509"}}