{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T18:01:04Z","timestamp":1774980064477,"version":"3.50.1"},"reference-count":37,"publisher":"AIP Publishing","issue":"16","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2013,4,28]]},"abstract":"<jats:p>We report on the effect of Pt on the growth kinetics of \u03b4-Ni2Si and Ni1\u2212xPtxSi thin films formed by solid phase reaction of a Ni(Pt) alloyed thin film on Si(100). The study was performed by real-time Rutherford backscattering spectrometry examining the silicide growth rates for initial Pt concentrations of 0, 1, 3, 7, and 10 at. % relative to the Ni content. Pt was found to exert a drastic effect on the growth kinetics of both phases. \u03b4-Ni2Si growth is slowed down tremendously, which results in the simultaneous growth of this phase with Ni1\u2212xPtxSi. Activation energies extracted for the Ni1\u2212xPtxSi growth process exhibit an increase from Ea\u2009=\u20091.35\u2009\u00b1\u20090.06\u2009eV for binary NiSi to Ea\u2009=\u20092.7\u2009\u00b1\u20090.2\u2009eV for Ni1\u2212xPtxSi with an initial Pt concentration of 3 at. %. Further increasing the Pt content to 10 at. % merely increases the activation energy for Ni1\u2212xPtxSi growth to Ea\u2009=\u20093.1\u2009\u00b1\u20090.5\u2009eV.<\/jats:p>","DOI":"10.1063\/1.4802738","type":"journal-article","created":{"date-parts":[[2013,4,24]],"date-time":"2013-04-24T22:07:57Z","timestamp":1366841277000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":25,"title":["On the growth kinetics of Ni(Pt) silicide thin films"],"prefix":"10.1063","volume":"113","author":[{"given":"J.","family":"Demeulemeester","sequence":"first","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica 1 , KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium"}]},{"given":"D.","family":"Smeets","sequence":"additional","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica 1 , KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium"}]},{"given":"C. M.","family":"Comrie","sequence":"additional","affiliation":[{"name":"Department of Physics, University of Cape Town 2 , Rondebosch 7700, South Africa"}]},{"given":"N. P.","family":"Barradas","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear 3 , Estrada Nacional 10, Apartado 21, 2686-953 Sacav\u00e9m, Portugal and Centro de F\u00edsica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1699 Lisboa Codex, Portugal"}]},{"given":"A.","family":"Vieira","sequence":"additional","affiliation":[{"name":"Instituto Superior de Engenharia do Porto 4 , Rua S. 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