{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,19]],"date-time":"2026-01-19T03:57:58Z","timestamp":1768795078008,"version":"3.49.0"},"reference-count":34,"publisher":"AIP Publishing","issue":"19","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2013,5,21]]},"abstract":"<jats:p>In this work, a n-ZnO\/p-GaN heterojunction is analyzed using admittance spectroscopy techniques. Capacitance transient measurements performed at 10\u2009kHz reveal four majority-carrier deep levels, the most important one located at approximately 0.57\u2009eV below the ZnO conduction band (CB) edge with a density about two orders of magnitude below the doping level (NT\u2009=\u20094\u2009\u00d7\u20091015\u2009cm\u22123). The others, located at 0.20\u2009eV, 0.65\u2009eV, and 0.73\u2009eV, are about three orders of magnitude below the doping level (NT\u2009=\u20094\u20139\u2009\u00d7\u20091014\u2009cm\u22123).<\/jats:p>","DOI":"10.1063\/1.4805655","type":"journal-article","created":{"date-parts":[[2013,5,17]],"date-time":"2013-05-17T22:42:04Z","timestamp":1368830524000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":11,"title":["Trap levels in the atomic layer deposition-ZnO\/GaN heterojunction\u2014Thermal admittance spectroscopy studies"],"prefix":"10.1063","volume":"113","author":[{"given":"Tomasz A.","family":"Krajewski","sequence":"first","affiliation":[{"name":"Polish Academy of Sciences 1 , , Al. Lotnikow 32\/46, 02-668 Warsaw, Poland"},{"name":"Institute of Physics 1 , , Al. Lotnikow 32\/46, 02-668 Warsaw, Poland"}]},{"given":"Peter","family":"Stallinga","sequence":"additional","affiliation":[{"name":"Center of Electronics, Optoelectronics and Telecommunications (CEOT) Universidade do Algarve 2 , Campus de Gambelas, 8005-139 Faro, Portugal"}]},{"given":"Eunika","family":"Zielony","sequence":"additional","affiliation":[{"name":"Institute of Physics, Wroclaw University of Technology 3 , Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland"}]},{"given":"Krzysztof","family":"Goscinski","sequence":"additional","affiliation":[{"name":"Polish Academy of Sciences 1 , , Al. Lotnikow 32\/46, 02-668 Warsaw, Poland"},{"name":"Institute of Physics 1 , , Al. Lotnikow 32\/46, 02-668 Warsaw, Poland"}]},{"given":"Piotr","family":"Kruszewski","sequence":"additional","affiliation":[{"name":"Polish Academy of Sciences 4 , , ul. Sokolowska 29\/37, 01-142 Warsaw, Poland"},{"name":"Institute of High Pressure Physics 4 , , ul. Sokolowska 29\/37, 01-142 Warsaw, Poland"}]},{"given":"Lukasz","family":"Wachnicki","sequence":"additional","affiliation":[{"name":"Polish Academy of Sciences 1 , , Al. Lotnikow 32\/46, 02-668 Warsaw, Poland"},{"name":"Institute of Physics 1 , , Al. Lotnikow 32\/46, 02-668 Warsaw, Poland"}]},{"given":"Timo","family":"Aschenbrenner","sequence":"additional","affiliation":[{"name":"Institute of Solid State Physics 5 , , Otto-Hahn-Allee NW1, Bremen 28359, Germany"},{"name":"University of Bremen 5 , , Otto-Hahn-Allee NW1, Bremen 28359, Germany"}]},{"given":"Detlef","family":"Hommel","sequence":"additional","affiliation":[{"name":"Institute of Solid State Physics 5 , , Otto-Hahn-Allee NW1, Bremen 28359, Germany"},{"name":"University of Bremen 5 , , Otto-Hahn-Allee NW1, Bremen 28359, Germany"}]},{"given":"Elzbieta","family":"Guziewicz","sequence":"additional","affiliation":[{"name":"Polish Academy of Sciences 1 , , Al. 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