{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,17]],"date-time":"2026-03-17T09:29:47Z","timestamp":1773739787147,"version":"3.50.1"},"reference-count":20,"publisher":"AIP Publishing","issue":"21","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2013,5,27]]},"abstract":"<jats:p>This work reports the impact of ZnO layer thickness on optical and resistive switching behavior of BaTiO3\/ZnO heterostructures grown by pulsed laser deposition. The interface polarization coupling becomes more efficient and causes a remarkable change in heterostructure properties with decrease in ZnO layer thickness. The heterostructure with ZnO thickness of 25\u2009nm displays the enhanced resistive switching characteristics with switching ratio \u2248106 and good stability in low and high resistance states. Moreover, the photoluminescence spectrum exhibits two additional blue emissions when ZnO thickness is \u226450\u2009nm and their mechanism is highlighted based on interface band offset and interface polarization coupling effect.<\/jats:p>","DOI":"10.1063\/1.4809531","type":"journal-article","created":{"date-parts":[[2013,6,1]],"date-time":"2013-06-01T04:18:24Z","timestamp":1370060304000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":46,"title":["Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3\/ZnO heterostructures"],"prefix":"10.1063","volume":"102","author":[{"given":"K. C.","family":"Sekhar","sequence":"first","affiliation":[{"name":"Centre of Physics, University of Minho , Campus de Gualtar, 4710057 Braga, Portugal"}]},{"given":"J. P. 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