{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,12]],"date-time":"2026-04-12T02:12:16Z","timestamp":1775959936103,"version":"3.50.1"},"reference-count":18,"publisher":"AIP Publishing","issue":"6","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2013,8,5]]},"abstract":"<jats:p>Modulated structures consisting of square arrays of 60\u2009nm thick Ni80Fe20 circular dots underneath a continuous Ni80Fe20 film were fabricated using multi-level process based on deep ultraviolet lithography at 248\u2009nm exposure wavelength. We observed a drastic change in both the static and dynamic properties of the modulated structures by varying the Ni80Fe20 film thickness t in the range from 5 to 60\u2009nm. It was revealed via comparison between experimental results and micromagnetic simulations that the dots create perturbations of internal fields in the neighbor regions of the film which can be controlled by magnetic field and film thickness.<\/jats:p>","DOI":"10.1063\/1.4817798","type":"journal-article","created":{"date-parts":[[2013,8,5]],"date-time":"2013-08-05T22:30:53Z","timestamp":1375741853000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":28,"title":["Magnonic crystals composed of Ni80Fe20 film on top of Ni80Fe20 two-dimensional dot array"],"prefix":"10.1063","volume":"103","author":[{"given":"X. M.","family":"Liu","sequence":"first","affiliation":[{"name":"Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore , Singapore, Singapore 117576"}]},{"given":"J.","family":"Ding","sequence":"additional","affiliation":[{"name":"Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore , Singapore, Singapore 117576"}]},{"given":"G. N.","family":"Kakazei","sequence":"additional","affiliation":[{"name":"Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore , Singapore, Singapore 117576"}]},{"given":"A. O.","family":"Adeyeye","sequence":"additional","affiliation":[{"name":"Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore , Singapore, Singapore 117576"}]}],"member":"317","published-online":{"date-parts":[[2013,8,5]]},"reference":[{"key":"2023062714201871000_c1","doi-asserted-by":"publisher","first-page":"264001","DOI":"10.1088\/0022-3727\/43\/26\/264001","volume":"43","year":"2010","journal-title":"J. Phys. D: Appl. Phys."},{"key":"2023062714201871000_c2","doi-asserted-by":"publisher","first-page":"264005","DOI":"10.1088\/0022-3727\/43\/26\/264005","volume":"43","year":"2010","journal-title":"J. Phys. D: Appl. Phys."},{"key":"2023062714201871000_c3","doi-asserted-by":"publisher","first-page":"264003","DOI":"10.1088\/0022-3727\/43\/26\/264003","volume":"43","year":"2010","journal-title":"J. Phys. D: Appl. 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