{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,12]],"date-time":"2026-04-12T03:55:40Z","timestamp":1775966140893,"version":"3.50.1"},"reference-count":51,"publisher":"AIP Publishing","issue":"10","content-domain":{"domain":["aip.scitation.org"],"crossmark-restriction":true},"short-container-title":["Journal of Applied Physics"],"published-print":{"date-parts":[[2013,9,14]]},"DOI":"10.1063\/1.4819210","type":"journal-article","created":{"date-parts":[[2013,9,11]],"date-time":"2013-09-11T22:12:16Z","timestamp":1378937536000},"page":"103503","update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":16,"title":["Influence of n+ and p+ doping on the lattice sites of implanted Fe in Si"],"prefix":"10.1063","volume":"114","author":[{"given":"D. J.","family":"Silva","sequence":"first","affiliation":[]},{"given":"U.","family":"Wahl","sequence":"additional","affiliation":[]},{"given":"J. G.","family":"Correia","sequence":"additional","affiliation":[]},{"given":"J. P.","family":"Ara\u00fajo","sequence":"additional","affiliation":[]}],"member":"317","reference":[{"key":"c1","doi-asserted-by":"publisher","DOI":"10.1007\/BF00617708"},{"key":"c2","doi-asserted-by":"publisher","DOI":"10.1007\/s003390050968"},{"key":"c3","doi-asserted-by":"publisher","DOI":"10.1007\/s003390051074"},{"key":"c4","doi-asserted-by":"publisher","DOI":"10.1063\/1.1289273"},{"key":"c5","doi-asserted-by":"publisher","DOI":"10.1016\/j.mseb.2006.06.023"},{"key":"c6","doi-asserted-by":"publisher","DOI":"10.1063\/1.368438"},{"key":"c7","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.68.113310"},{"key":"c8","doi-asserted-by":"publisher","DOI":"10.1063\/1.1688002"},{"key":"c9","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.77.155201"},{"key":"c10","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.100.027205"},{"key":"c11","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.79.235202"},{"key":"c12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.80.045203"},{"key":"c13","doi-asserted-by":"publisher","DOI":"10.1063\/1.4788800"},{"key":"c14","doi-asserted-by":"publisher","DOI":"10.1063\/1.363322"},{"key":"c15","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201000849"},{"key":"c16","doi-asserted-by":"publisher","DOI":"10.1016\/j.mseb.2008.10.060"},{"key":"c17","doi-asserted-by":"publisher","DOI":"10.1016\/j.mseb.2008.10.055"},{"key":"c18","doi-asserted-by":"publisher","DOI":"10.1016\/j.mseb.2008.11.030"},{"key":"c19","doi-asserted-by":"publisher","DOI":"10.1063\/1.3569890"},{"key":"c20","doi-asserted-by":"publisher","DOI":"10.1063\/1.3607239"},{"key":"c21","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.81.235213"},{"key":"c22","doi-asserted-by":"publisher","DOI":"10.1016\/0378-4363(83)90263-2"},{"key":"c23","doi-asserted-by":"publisher","DOI":"10.1063\/1.345063"},{"key":"c24","doi-asserted-by":"publisher","DOI":"10.1063\/1.363236"},{"key":"c25","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.72.014115"},{"key":"c26","doi-asserted-by":"publisher","DOI":"10.1016\/j.nimb.2006.10.053"},{"key":"c27","doi-asserted-by":"publisher","DOI":"10.1016\/S0921-4526(99)00479-2"},{"key":"c28","doi-asserted-by":"publisher","DOI":"10.1063\/1.1314876"},{"key":"c29","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.84.1495"},{"key":"c30","doi-asserted-by":"publisher","DOI":"10.1016\/S0168-583X(01)01191-0"},{"key":"c31","doi-asserted-by":"publisher","DOI":"10.1063\/1.4788695"},{"key":"c32","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.92.255504"},{"key":"c33","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.78.125310"},{"key":"c34","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.60.5375"},{"key":"c35","doi-asserted-by":"publisher","DOI":"10.1002\/(SICI)1521-3951(200001)217:1<513::AID-PSSB513>3.0.CO;2-6"},{"key":"c36","unstructured":"G. D. Watkins, Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach, New York, 1986), p. 147."},{"key":"c37","doi-asserted-by":"publisher","DOI":"10.1016\/j.nimb.2004.01.208"},{"key":"c38","doi-asserted-by":"publisher","DOI":"10.1016\/S0168-9002(03)01368-8"},{"key":"c39","doi-asserted-by":"publisher","DOI":"10.1063\/1.365746"},{"key":"c40","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.76.125204"},{"key":"c41","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.77.125214"},{"key":"c42","doi-asserted-by":"publisher","DOI":"10.1016\/j.physb.2003.09.141"},{"key":"c43","doi-asserted-by":"publisher","DOI":"10.1007\/s10751-006-9444-9"},{"key":"c44","doi-asserted-by":"publisher","DOI":"10.1016\/S0921-4526(99)00478-0"},{"key":"c45","doi-asserted-by":"publisher","DOI":"10.1007\/s10751-008-9607-y"},{"key":"c46","doi-asserted-by":"publisher","DOI":"10.1063\/1.1469216"},{"key":"c47","doi-asserted-by":"publisher","DOI":"10.1063\/1.3592568"},{"key":"c48","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.102.065502"},{"key":"c49","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.81.155204"},{"key":"c50","doi-asserted-by":"publisher","DOI":"10.1063\/1.3501123"},{"key":"c51","doi-asserted-by":"publisher","DOI":"10.1016\/S0370-1573(96)00021-X"}],"container-title":["Journal of Applied Physics"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/aip.scitation.org\/doi\/pdf\/10.1063\/1.4819210","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,4,19]],"date-time":"2023-04-19T23:03:04Z","timestamp":1681945384000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article\/139418"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,9,14]]},"references-count":51,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2013,9,14]]}},"alternative-id":["10.1063\/1.4819210"],"URL":"https:\/\/doi.org\/10.1063\/1.4819210","relation":{},"ISSN":["0021-8979","1089-7550"],"issn-type":[{"value":"0021-8979","type":"print"},{"value":"1089-7550","type":"electronic"}],"subject":[],"published":{"date-parts":[[2013,9,14]]}}}