{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,24]],"date-time":"2025-10-24T12:33:36Z","timestamp":1761309216696,"version":"3.41.2"},"reference-count":45,"publisher":"AIP Publishing","issue":"2","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2014,1,14]]},"abstract":"<jats:p>We have studied the lattice location of implanted nickel in silicon, for different doping types (n, n+, and p+). By means of on-line emission channeling, 65Ni was identified on three different sites of the diamond lattice: ideal substitutional sites, displaced bond-center towards substitutional sites (near-BC), and displaced tetrahedral interstitial towards anti-bonding sites (near-T). We suggest that the large majority of the observed lattice sites are not related to the isolated form of Ni but rather to its trapping into vacancy-related defects produced during the implantation. While near-BC sites are prominent after annealing up to 300\u2013500\u2009\u00b0C, near-T sites are preferred after 500\u2013600\u2009\u00b0C anneals. Long-range diffusion starts at 600\u2013700\u2009\u00b0C. We show evidence of Ni diffusion towards the surface and its further trapping on near-T sites at the Rp\/2 region, providing a clear picture of the microscopic mechanism of Ni gettering by vacancy-type defects. The high thermal stability of near-BC sites in n+-type Si, and its importance for the understanding of P-diffusion gettering are also discussed.<\/jats:p>","DOI":"10.1063\/1.4861142","type":"journal-article","created":{"date-parts":[[2014,1,14]],"date-time":"2014-01-14T19:40:29Z","timestamp":1389728429000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":14,"title":["Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling"],"prefix":"10.1063","volume":"115","author":[{"given":"D. J.","family":"Silva","sequence":"first","affiliation":[{"name":"IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de F\u00edsica e Astronomia da Faculdade de Ci\u00eancias da Universidade do Porto 1 , 4169-007 Porto, Portugal"}]},{"given":"U.","family":"Wahl","sequence":"additional","affiliation":[{"name":"Centro de Ci\u00eancias e Tecnologias Nucleares, Instituto Superior T\u00e9cnico, Universidade de Lisboa 2 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"J. G.","family":"Correia","sequence":"additional","affiliation":[{"name":"Centro de Ci\u00eancias e Tecnologias Nucleares, Instituto Superior T\u00e9cnico, Universidade de Lisboa 2 , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"L. M. C.","family":"Pereira","sequence":"additional","affiliation":[{"name":"Instituut voor Kern-en Stralingsfysica 3 , KU Leuven, 3001 Leuven, Belgium"}]},{"given":"L. M.","family":"Amorim","sequence":"additional","affiliation":[{"name":"Instituut voor Kern-en Stralingsfysica 3 , KU Leuven, 3001 Leuven, Belgium"}]},{"given":"M. R.","family":"da Silva","sequence":"additional","affiliation":[{"name":"Centro de F\u00edsica Nuclear da Universidade de Lisboa 4 , 1649-003 Lisboa, Portugal"}]},{"given":"E.","family":"Bosne","sequence":"additional","affiliation":[{"name":"Centro de Ci\u00eancias e Tecnologias Nucleares, Instituto Superior T\u00e9cnico, Universidade de Lisboa 2 , 2686-953 Sacav\u00e9m, Portugal"},{"name":"Departamento de F\u00edsica da Universidade de Aveiro 5 , 3810-193 Aveiro, Portugal"}]},{"given":"J. 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