{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,15]],"date-time":"2025-12-15T13:59:16Z","timestamp":1765807156752,"version":"3.41.2"},"reference-count":22,"publisher":"AIP Publishing","issue":"17","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2014,5,7]]},"abstract":"<jats:p>Highly sensitive nanosensors with high spatial resolution provide the necessary features for high accuracy imaging of isolated magnetic nanoparticles. In this work, we report the fabrication and characterization of MgO-barrier magnetic tunnel junction nanosensors, with two exchange-pinned electrodes. The perpendicular magnetization configuration for field sensing is set using a two-step annealing process, where the second annealing temperature was optimized to yield patterned sensors responses with improved linearity. The optimized circular nanosensors show sensitivities up to 0.1%\/Oe, larger than previously reported for nanometric sensors and comparable to micrometric spin-valves. Our strategy avoids the use of external permanent biasing or demagnetizing fields (large for smaller structures) to achieve a linear response, enabling the control of the linear operation range using only the stack and thus providing a small footprint device.<\/jats:p>","DOI":"10.1063\/1.4869163","type":"journal-article","created":{"date-parts":[[2014,3,21]],"date-time":"2014-03-21T00:30:28Z","timestamp":1395361828000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":19,"title":["Linear nanometric tunnel junction sensors with exchange pinned sensing layer"],"prefix":"10.1063","volume":"115","author":[{"given":"D. C.","family":"Leitao","sequence":"first","affiliation":[{"name":"INESC-MN and IN 1 , Rua Alves Redol 9, 1000-029 Lisboa, Portugal"},{"name":"Instituto Superior T\u00e9cnico (IST), Universidade de Lisboa 2 , Av. Rovisco Pais, 1000-029 Lisboa, Portugal"}]},{"given":"A. V.","family":"Silva","sequence":"additional","affiliation":[{"name":"INESC-MN and IN 1 , Rua Alves Redol 9, 1000-029 Lisboa, Portugal"},{"name":"Instituto Superior T\u00e9cnico (IST), Universidade de Lisboa 2 , Av. Rovisco Pais, 1000-029 Lisboa, Portugal"}]},{"given":"R.","family":"Ferreira","sequence":"additional","affiliation":[{"name":"INL 3 , Av. Mestre Jose Veiga, 4715-31 Braga, Portugal"}]},{"given":"E.","family":"Paz","sequence":"additional","affiliation":[{"name":"INL 3 , Av. Mestre Jose Veiga, 4715-31 Braga, Portugal"}]},{"given":"F. L.","family":"Deepack","sequence":"additional","affiliation":[{"name":"INL 3 , Av. Mestre Jose Veiga, 4715-31 Braga, Portugal"}]},{"given":"S.","family":"Cardoso","sequence":"additional","affiliation":[{"name":"INESC-MN and IN 1 , Rua Alves Redol 9, 1000-029 Lisboa, Portugal"},{"name":"Instituto Superior T\u00e9cnico (IST), Universidade de Lisboa 2 , Av. Rovisco Pais, 1000-029 Lisboa, Portugal"}]},{"given":"P. P.","family":"Freitas","sequence":"additional","affiliation":[{"name":"INESC-MN and IN 1 , Rua Alves Redol 9, 1000-029 Lisboa, Portugal"},{"name":"INL 3 , Av. Mestre Jose Veiga, 4715-31 Braga, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2014,3,20]]},"reference":[{"key":"2023062217263468200_c1","doi-asserted-by":"publisher","first-page":"314","DOI":"10.1038\/nnano.2011.45","volume":"6","year":"2011","journal-title":"Nat. Nanotechnol."},{"key":"2023062217263468200_c2","doi-asserted-by":"publisher","first-page":"023101","DOI":"10.1063\/1.3179241","volume":"95","year":"2009","journal-title":"Appl. Phys. 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