{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,26]],"date-time":"2026-03-26T22:28:33Z","timestamp":1774564113485,"version":"3.50.1"},"reference-count":39,"publisher":"AIP Publishing","issue":"4","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2014,7,28]]},"abstract":"<jats:p>Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2\u00af01) oriented \u03b2-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2\u00af01) oriented \u03b2-Ga2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of \u223c108\u2009cm\u22122. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2\u00af01) \u03b2-Ga2O3 with in-plane epitaxial orientation relationships between the \u03b2-Ga2O3 and the GaN thin film defined by (010) \u03b2-Ga2O3 || (112\u00af0) GaN and (2\u00af01) \u03b2-Ga2O3 || (0001) GaN leading to a lattice mismatch of \u223c4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high.<\/jats:p>","DOI":"10.1063\/1.4891761","type":"journal-article","created":{"date-parts":[[2014,8,1]],"date-time":"2014-08-01T14:16:26Z","timestamp":1406902586000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":79,"title":["High optical and structural quality of GaN epilayers grown on (2\u00af01) \u03b2-Ga2O3"],"prefix":"10.1063","volume":"105","author":[{"given":"M. M.","family":"Muhammed","sequence":"first","affiliation":[{"name":"King Abdullah University of Science and Technology (KAUST) 1 Physical Sciences and Engineering Division, , Thuwal 23955-6900, Saudi Arabia"}]},{"given":"M.","family":"Peres","sequence":"additional","affiliation":[{"name":"Instituto Superior T\u00e9cnico (IST) 2 IPFN, , Campus Tecnol\u00f3gico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal"}]},{"given":"Y.","family":"Yamashita","sequence":"additional","affiliation":[{"name":"Tamura Corporation 3 , Sayama, Saitama 350-1328, Japan"}]},{"given":"Y.","family":"Morishima","sequence":"additional","affiliation":[{"name":"Tamura Corporation 3 , Sayama, Saitama 350-1328, Japan"}]},{"given":"S.","family":"Sato","sequence":"additional","affiliation":[{"name":"Tamura Corporation 3 , Sayama, Saitama 350-1328, Japan"}]},{"given":"N.","family":"Franco","sequence":"additional","affiliation":[{"name":"Instituto Superior T\u00e9cnico (IST) 2 IPFN, , Campus Tecnol\u00f3gico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto Superior T\u00e9cnico (IST) 2 IPFN, , Campus Tecnol\u00f3gico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal"}]},{"given":"A.","family":"Kuramata","sequence":"additional","affiliation":[{"name":"Tamura Corporation 3 , Sayama, Saitama 350-1328, Japan"}]},{"given":"I. 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