{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T14:27:17Z","timestamp":1774967237857,"version":"3.50.1"},"reference-count":17,"publisher":"AIP Publishing","issue":"8","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2014,8,25]]},"abstract":"<jats:p>We demonstrate the reduction and control of magnetic noise by voltage-induced perpendicular anisotropy modulation in CoFeB\/MgO\/CoFeB sensors. The noise decreases with the increase of the perpendicular anisotropy energy induced by the bias voltage polarity reversal. The bias reversal between \u22121 and +1\u2009V results in a reduction of the normalized 1\/f magnetic noise parameters by a factor of 7.3 and the thermal magnetic noise by a factor of 6.8. In the state of the highest field sensitivity, the lowest normalized 1\/f magnetic noise parameter reaches 6.45\u2009\u00d7\u200910\u221214\u2009\u03bcm3T. The results indicate that voltage-induced anisotropy modulation can be used to control and suppress magnetization fluctuations in the sensing layer and thus, significantly reduce the magnetic noise.<\/jats:p>","DOI":"10.1063\/1.4894172","type":"journal-article","created":{"date-parts":[[2014,8,28]],"date-time":"2014-08-28T00:30:58Z","timestamp":1409185858000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":21,"title":["Reduction of low frequency magnetic noise by voltage-induced magnetic anisotropy modulation in tunneling magnetoresistance sensors"],"prefix":"10.1063","volume":"105","author":[{"given":"P.","family":"Wisniowski","sequence":"first","affiliation":[{"name":"Department of Electronics, Al. Mickiewicza 30 1 AGH University of Science and Technology, , 30-059 Krakow, Poland"}]},{"given":"M.","family":"D\u0105bek","sequence":"additional","affiliation":[{"name":"Department of Electronics, Al. Mickiewicza 30 1 AGH University of Science and Technology, , 30-059 Krakow, Poland"}]},{"given":"W.","family":"Skowronski","sequence":"additional","affiliation":[{"name":"Department of Electronics, Al. Mickiewicza 30 1 AGH University of Science and Technology, , 30-059 Krakow, Poland"}]},{"given":"T.","family":"Stobiecki","sequence":"additional","affiliation":[{"name":"Department of Electronics, Al. Mickiewicza 30 1 AGH University of Science and Technology, , 30-059 Krakow, Poland"}]},{"given":"S.","family":"Cardoso","sequence":"additional","affiliation":[{"name":"INESC-MN and IN-Institute of Nanoscience and Nanotechnology 2 , Rua Alves Redol, 9-1, 1000-029 Lisbon, Portugal"}]},{"given":"P. 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