{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T06:05:55Z","timestamp":1768716355330,"version":"3.49.0"},"reference-count":40,"publisher":"AIP Publishing","issue":"23","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2014,12,21]]},"abstract":"<jats:p>We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x\u2009=\u20090.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x\u2009=\u20090.13\u20130.48, best structural and morphological qualities are obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such conditions, in situ and ex situ analyses of the evolution of the crystalline structure with the layer thickness point to an onset of misfit relaxation after the growth of 40\u2009nm, and a gradual relaxation during more than 200\u2009nm, which results in an inhomogeneous strain distribution along the growth axis. This process is associated with a compositional pulling effect, i.e., indium incorporation is partially inhibited in presence of compressive strain, resulting in a compositional gradient with increasing In mole fraction towards the surface.<\/jats:p>","DOI":"10.1063\/1.4903944","type":"journal-article","created":{"date-parts":[[2014,12,17]],"date-time":"2014-12-17T22:04:54Z","timestamp":1418853894000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":47,"title":["High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics"],"prefix":"10.1063","volume":"116","author":[{"given":"S.","family":"Valdueza-Felip","sequence":"first","affiliation":[{"name":"Universit\u00e9 Grenoble Alpes 1 , 38000 Grenoble, France"},{"name":"CEA-Grenoble 2 , INAC\/SP2M, 17 rue des Martyrs, 38054 Grenoble, France"}]},{"given":"E.","family":"Bellet-Amalric","sequence":"additional","affiliation":[{"name":"Universit\u00e9 Grenoble Alpes 1 , 38000 Grenoble, France"},{"name":"CEA-Grenoble 2 , INAC\/SP2M, 17 rue des Martyrs, 38054 Grenoble, France"}]},{"given":"A.","family":"N\u00fa\u00f1ez-Cascajero","sequence":"additional","affiliation":[{"name":"Universit\u00e9 Grenoble Alpes 1 , 38000 Grenoble, France"},{"name":"CEA-Grenoble 2 , INAC\/SP2M, 17 rue des Martyrs, 38054 Grenoble, France"},{"name":"Universidad de Alcal\u00e1 3 GRIFO, Department of Electr\u00f3nica, , 28871 Alcal\u00e1 de Henares, Madrid, Spain"}]},{"given":"Y.","family":"Wang","sequence":"additional","affiliation":[{"name":"CIMAP 4 , CNRS-ENSICAEN-CEA-UCBN, 6 Blvd. Mar\u00e9chal Juin, 14050 Caen, France"}]},{"given":"M.-P.","family":"Chauvat","sequence":"additional","affiliation":[{"name":"CIMAP 4 , CNRS-ENSICAEN-CEA-UCBN, 6 Blvd. Mar\u00e9chal Juin, 14050 Caen, France"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7356-8850","authenticated-orcid":false,"given":"P.","family":"Ruterana","sequence":"additional","affiliation":[{"name":"CIMAP 4 , CNRS-ENSICAEN-CEA-UCBN, 6 Blvd. Mar\u00e9chal Juin, 14050 Caen, France"}]},{"given":"S.","family":"Pouget","sequence":"additional","affiliation":[{"name":"Universit\u00e9 Grenoble Alpes 1 , 38000 Grenoble, France"},{"name":"CEA-Grenoble 2 , INAC\/SP2M, 17 rue des Martyrs, 38054 Grenoble, France"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"IPFN, Instituto Superior T\u00e9cnico (IST) 5 , Campus Tecnol\u00f3gico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"IPFN, Instituto Superior T\u00e9cnico (IST) 5 , Campus Tecnol\u00f3gico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal"}]},{"given":"E.","family":"Monroy","sequence":"additional","affiliation":[{"name":"Universit\u00e9 Grenoble Alpes 1 , 38000 Grenoble, France"},{"name":"CEA-Grenoble 2 , INAC\/SP2M, 17 rue des Martyrs, 38054 Grenoble, France"}]}],"member":"317","published-online":{"date-parts":[[2014,12,17]]},"reference":[{"key":"2023062512564276300_c1","doi-asserted-by":"publisher","first-page":"024507","DOI":"10.1063\/1.2952031","volume":"104","year":"2008","journal-title":"J. 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