{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,28]],"date-time":"2026-01-28T11:53:17Z","timestamp":1769601197008,"version":"3.49.0"},"reference-count":38,"publisher":"AIP Publishing","issue":"15","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2015,4,21]]},"abstract":"<jats:p>Capacitance-voltage (C\u2013V) and capacitance-frequency (C\u2013f) measurements are performed on atomic layer deposited TiO2 thin films with top and bottom Au and Pt electrodes, respectively, over a large temperature and frequency range. A sharp capacitance peak\/discontinuity (C\u2013V anomalous) is observed in the C\u2013V characteristics at various temperatures and voltages. It is demonstrated that this phenomenon is directly associated with oxygen vacancies. The C\u2013V peak irreversibility and dissymmetry at the reversal dc voltage are attributed to difference between the Schottky contacts at the metal\/TiO2 interfaces. Dielectric analyses reveal two relaxation processes with degeneration of the activation energy. The low trap level of 0.60\u20130.65\u2009eV is associated with the first ionized oxygen vacancy at low temperature, while the deep trap level of 1.05\u2009eV is associated to the second ionized oxygen vacancy at high temperature. The DC conductivity of the films exhibits a transition temperature at 200\u2009\u00b0C, suggesting a transition from a conduction regime governed by ionized oxygen vacancies to one governed by interstitial Ti3+ ions. Both the C\u2013V anomalous and relaxation processes in TiO2 arise from oxygen vacancies, while the conduction mechanism at high temperature is governed by interstitial titanium ions.<\/jats:p>","DOI":"10.1063\/1.4917531","type":"journal-article","created":{"date-parts":[[2015,4,15]],"date-time":"2015-04-15T17:04:38Z","timestamp":1429117478000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":11,"title":["Anomalous C-V response correlated to relaxation processes in TiO2 thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects"],"prefix":"10.1063","volume":"117","author":[{"given":"A.","family":"Kahouli","sequence":"first","affiliation":[{"name":"Organization and Properties (LabMOP) 1 Laboratory for Materials, , 2092 Tunis, Tunisia"},{"name":"University Grenoble Alpes 2 , G2Elab, F-38000 Grenoble, France"}]},{"given":"C.","family":"Marichy","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro\/CICECO, Campus Universitario de Santiago 3 Complexo de Laborat\u00f3rios Tecnol\u00f3gicos, , 3810-193 Aveiro, Portugal"}]},{"given":"A.","family":"Sylvestre","sequence":"additional","affiliation":[{"name":"University Grenoble Alpes 2 , G2Elab, F-38000 Grenoble, France"}]},{"given":"N.","family":"Pinna","sequence":"additional","affiliation":[{"name":"Humboldt-Universit\u00e4t zu Berlin Institut f\u00fcr Chemie 4"}]}],"member":"317","published-online":{"date-parts":[[2015,4,15]]},"reference":[{"key":"2023062217351441000_c1","doi-asserted-by":"publisher","first-page":"735","DOI":"10.1021\/cr00035a013","volume":"95","year":"1995","journal-title":"Chem. 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