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The presence of oxygen vacancies in the HfAlOx layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)\/HfAlOx(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO\/HfAlOx thickness of 30\/40\u2009nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state\/intermediate resistance state (IRS) and IRS\/low resistance state resistance ratios are \u2248102 and \u22485 \u00d7 105, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.<\/jats:p>","DOI":"10.1063\/1.4937801","type":"journal-article","created":{"date-parts":[[2015,12,18]],"date-time":"2015-12-18T18:00:52Z","timestamp":1450461652000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":18,"title":["Enhanced resistive switching and multilevel behavior in bilayered HfAlO\/HfAlOx structures for non-volatile memory applications"],"prefix":"10.1063","volume":"107","author":[{"given":"F. 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