{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,30]],"date-time":"2025-09-30T11:04:15Z","timestamp":1759230255845,"version":"3.41.2"},"reference-count":52,"publisher":"AIP Publishing","issue":"16","funder":[{"name":"Funda\u00e7\u00e3o para a Ci\u00eancia e Tecnolologia"}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2016,10,28]]},"abstract":"<jats:p>AlxGa1-xN (x\u2009=\u20090.15 and 0.77) films, grown by halide vapor phase epitaxy, were implanted with 300\u2009keV Tm ions. Implantation damage accumulation is investigated with Rutherford backscattering spectrometry\/channeling (RBS\/C), transmission electron microscopy (TEM), and high resolution X-ray diffraction (XRD). Distinct damage behavior for samples with different AlN contents was found. Surface nanocrystallization occurs for samples with x\u2009=\u20090.15, similar to implantation effects observed in GaN. Samples with x\u2009=\u20090.77 approach the behavior of AlN. In particular, surface nanocrystallization is suppressed and the depth range of the stacking fault network, typical for implanted III-nitrides, is decreased. The crystalline quality of the sample with x\u2009=\u20090.15 was investigated to compare random and channeled implantation, showing less concentration of damage but with a higher range for channeled implantation. Surprisingly, the strain field caused by the implantation reaches much deeper into the sample than the defect profiles measured by RBS\/C and TEM. This is attributed to the fact that XRD is much more sensitive to low defect densities caused by ions which are channeled to deep regions of the sample.<\/jats:p>","DOI":"10.1063\/1.4966120","type":"journal-article","created":{"date-parts":[[2016,10,27]],"date-time":"2016-10-27T17:01:25Z","timestamp":1477587685000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":11,"title":["Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium"],"prefix":"10.1063","volume":"120","author":[{"given":"M.","family":"Fialho","sequence":"first","affiliation":[{"name":"Universidade de Lisboa 1 IPFN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, , Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal"}]},{"given":"S.","family":"Magalh\u00e3es","sequence":"additional","affiliation":[{"name":"Universidade de Lisboa 1 IPFN, Campus Tecnol\u00f3gico e Nuclear, Instituto Superior T\u00e9cnico, , Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal"}]},{"given":"M. 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