{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,15]],"date-time":"2025-10-15T10:19:59Z","timestamp":1760523599797,"version":"3.41.2"},"reference-count":33,"publisher":"AIP Publishing","issue":"16","funder":[{"DOI":"10.13039\/501100000266","name":"RCUK | Engineering and Physical Sciences Research Council","doi-asserted-by":"publisher","award":["EP\/M024911\/1"],"award-info":[{"award-number":["EP\/M024911\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2018,4,28]]},"abstract":"<jats:p>Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] \u2265 1\u2009\u00d7\u20091016\u2009cm\u22123 and [Oi] \u2265 1017\u2009cm\u22123} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS\/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14\u2009eV, respectively. We argue that the E1\/H1 and E2\/H2 pairs of electron\/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O\u2009+\u2009C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.<\/jats:p>","DOI":"10.1063\/1.5011351","type":"journal-article","created":{"date-parts":[[2018,3,14]],"date-time":"2018-03-14T17:43:29Z","timestamp":1521049409000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":4,"title":["Lifetime degradation of n-type Czochralski silicon after hydrogenation"],"prefix":"10.1063","volume":"123","author":[{"given":"M.","family":"Vaqueiro-Contreras","sequence":"first","affiliation":[{"name":"Photon Science Institute, University of Manchester 1 , Manchester M13 9PL, United Kingdom"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2503-6144","authenticated-orcid":false,"given":"V. 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I.","family":"Murin","sequence":"additional","affiliation":[{"name":"Materials Research Center NAS 2 , Minsk 220072, Belarus"}]},{"given":"R.","family":"Falster","sequence":"additional","affiliation":[{"name":"SunEdison Semiconductor, Ltd. 3 , viale Gherzi 31, 28100 Novara, Italy"}]},{"given":"J.","family":"Binns","sequence":"additional","affiliation":[{"name":"SunEdison Inc. 4 , 7832 N. Leadbetter Rd., Portland, Oregon 97203, USA , [Now owned by GCL Solar Materials, 7833 North Leadbetter Road, Portland, Oregon, 97203 USA]"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0280-366X","authenticated-orcid":false,"given":"J.","family":"Coutinho","sequence":"additional","affiliation":[{"name":"Department of Physics and I3N, University of Aveiro 5 , Aveiro 3810-193, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7667-4624","authenticated-orcid":false,"given":"A. 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