{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,13]],"date-time":"2025-11-13T02:02:56Z","timestamp":1762999376778,"version":"3.41.2"},"reference-count":46,"publisher":"AIP Publishing","issue":"8","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2018,8,20]]},"abstract":"<jats:p>GaN\/AlGaN multiple quantum wells (MQWs) are grown on a 2\u00af01-oriented \u03b2-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a \u03b2-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a \u03b2-Ga2O3 substrate are of higher optical quality. Our work indicates that the 2\u00af01-oriented \u03b2-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.<\/jats:p>","DOI":"10.1063\/1.5025178","type":"journal-article","created":{"date-parts":[[2018,8,20]],"date-time":"2018-08-20T16:02:48Z","timestamp":1534780968000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":49,"title":["GaN\/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented \u03b2-Ga2O3 substrate for UV vertical light emitting devices"],"prefix":"10.1063","volume":"113","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3156-4426","authenticated-orcid":false,"given":"I. 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