{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,3]],"date-time":"2025-10-03T12:49:02Z","timestamp":1759495742268,"version":"3.41.2"},"reference-count":36,"publisher":"AIP Publishing","issue":"10","funder":[{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["SFRH\/BPD\/92896\/2013","UID\/FIS\/04650\/2013"],"award-info":[{"award-number":["SFRH\/BPD\/92896\/2013","UID\/FIS\/04650\/2013"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2018,9,3]]},"abstract":"<jats:p>In the present work, the effect of the ferroelectric layer thickness on the resistive switching (RS) characteristics of 0.5 Ba(Zr0.2Ti0.8)O3-0.5 (Ba0.7Ca0.3)TiO3 (BCZT)\/HfO2:Al2O3 (HAO) structures deposited on Pt-Si substrates in a metal-dielectric-ferroelectric-metal configuration is investigated. The polarization-electric field hysteresis loops disclose the ferroelectric nature of the Pt\/BCZT\/HAO\/Au structures and reveal that the remnant polarization and the coercive field decrease with the increase in the BCZT ferroelectric layer thickness. Furthermore, the RS behavior is observed in Pt\/BCZT\/HAO\/Au structures and is attributed to the barrier variation at the BCZT\/HAO interface caused by the ferroelectric polarization flipping. Besides, it is also shown that the RS ratio and the switching field can be tuned by the thickness of the ferroelectric layer. This work intends to be a first step to build an alternative stack that provides an efficient way to develop dielectric-ferroelectric structures for RS memory devices with low power consumption.<\/jats:p>","DOI":"10.1063\/1.5047853","type":"journal-article","created":{"date-parts":[[2018,9,6]],"date-time":"2018-09-06T15:07:23Z","timestamp":1536246443000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":4,"title":["Impact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric\/dielectric structures"],"prefix":"10.1063","volume":"113","author":[{"given":"J. M. B.","family":"Silva","sequence":"first","affiliation":[{"name":"Centro de F\u00edsica das Universidades do Minho e do Porto (CF-UM-UP), Campus de Gualtar 1 , 4710-057 Braga, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3485-7032","authenticated-orcid":false,"given":"J. P. B.","family":"Silva","sequence":"additional","affiliation":[{"name":"Centro de F\u00edsica das Universidades do Minho e do Porto (CF-UM-UP), Campus de Gualtar 1 , 4710-057 Braga, Portugal"},{"name":"IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de F\u00edsica e Astronomia, Faculdade de Ci\u00eancias da Universidade do Porto 2 , Rua do Campo Alegre 687, 4169-007 Porto, Portugal"}]},{"given":"K. C.","family":"Sekhar","sequence":"additional","affiliation":[{"name":"Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu 3 , Thiruvarur 610 101, India"}]},{"given":"M.","family":"Pereira","sequence":"additional","affiliation":[{"name":"Centro de F\u00edsica das Universidades do Minho e do Porto (CF-UM-UP), Campus de Gualtar 1 , 4710-057 Braga, Portugal"}]},{"given":"M. J. M.","family":"Gomes","sequence":"additional","affiliation":[{"name":"Centro de F\u00edsica das Universidades do Minho e do Porto (CF-UM-UP), Campus de Gualtar 1 , 4710-057 Braga, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2018,9,6]]},"reference":[{"key":"2023061715390025100_c1","doi-asserted-by":"publisher","first-page":"340","DOI":"10.1557\/mrs.2018.92","volume":"43","year":"2018","journal-title":"MRS Bull."},{"key":"2023061715390025100_c2","doi-asserted-by":"publisher","first-page":"23963","DOI":"10.1021\/acsami.6b07792","volume":"8","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2023061715390025100_c3","doi-asserted-by":"publisher","first-page":"192901","DOI":"10.1063\/1.3589814","volume":"98","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c4","doi-asserted-by":"publisher","first-page":"207","DOI":"10.1038\/s41467-017-00245-9","volume":"8","year":"2017","journal-title":"Nat. Commun."},{"key":"2023061715390025100_c5","doi-asserted-by":"publisher","first-page":"056102","DOI":"10.1063\/1.4875355","volume":"2","year":"2014","journal-title":"APL Mater."},{"key":"2023061715390025100_c6","doi-asserted-by":"publisher","first-page":"860","DOI":"10.1038\/nmat3415","volume":"11","year":"2012","journal-title":"Nat. Mater."},{"key":"2023061715390025100_c7","doi-asserted-by":"publisher","first-page":"102905","DOI":"10.1063\/1.5023877","volume":"112","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c8","doi-asserted-by":"publisher","first-page":"2208","DOI":"10.1038\/srep02208","volume":"3","year":"2013","journal-title":"Sci. Rep."},{"key":"2023061715390025100_c9","doi-asserted-by":"publisher","first-page":"19758","DOI":"10.1021\/am504871g","volume":"6","year":"2014","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2023061715390025100_c10","doi-asserted-by":"publisher","first-page":"143503","DOI":"10.1063\/1.4870813","volume":"104","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c11","doi-asserted-by":"publisher","first-page":"212903","DOI":"10.1063\/1.4809531","volume":"102","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c12","doi-asserted-by":"publisher","first-page":"113505","DOI":"10.1063\/1.3694016","volume":"100","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c13","doi-asserted-by":"publisher","first-page":"5518","DOI":"10.1038\/ncomms6518","volume":"5","year":"2014","journal-title":"Nat. Commun."},{"year":"2016","key":"2023061715390025100_c14","first-page":"1"},{"year":"2017","key":"2023061715390025100_c15","first-page":"1"},{"key":"2023061715390025100_c16","doi-asserted-by":"publisher","first-page":"092903","DOI":"10.1063\/1.4867260","volume":"104","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c17","doi-asserted-by":"publisher","first-page":"687","DOI":"10.1016\/j.apsusc.2017.10.100","volume":"434","year":"2018","journal-title":"Appl. Surf. Sci."},{"key":"2023061715390025100_c18","doi-asserted-by":"publisher","first-page":"46350","DOI":"10.1038\/srep46350","volume":"7","year":"2017","journal-title":"Sci. Rep."},{"key":"2023061715390025100_c19","doi-asserted-by":"publisher","first-page":"354","DOI":"10.1016\/j.apsusc.2018.02.269","volume":"443","year":"2018","journal-title":"Appl. Surf. Sci."},{"key":"2023061715390025100_c20","doi-asserted-by":"publisher","first-page":"335301","DOI":"10.1088\/0022-3727\/49\/33\/335301","volume":"49","year":"2016","journal-title":"J. Phys. D: Appl. Phys."},{"key":"2023061715390025100_c21","doi-asserted-by":"publisher","first-page":"2412","DOI":"10.1002\/adfm.201103119","volume":"22","year":"2012","journal-title":"Adv. Funct. Mater."},{"key":"2023061715390025100_c22","doi-asserted-by":"publisher","first-page":"2623","DOI":"10.1063\/1.360122","volume":"78","year":"1995","journal-title":"J. Appl. Phys."},{"issue":"34","key":"2023061715390025100_c23","doi-asserted-by":"publisher","first-page":"2372","DOI":"10.1016\/j.physleta.2018.05.049","volume":"382","year":"2018","journal-title":"Phys. Lett. A"},{"key":"2023061715390025100_c24","doi-asserted-by":"publisher","first-page":"064101","DOI":"10.1063\/1.3636397","volume":"110","year":"2011","journal-title":"J. Appl. Phys."},{"key":"2023061715390025100_c25","doi-asserted-by":"publisher","first-page":"219","DOI":"10.1016\/j.pnsc.2012.04.008","volume":"22","year":"2012","journal-title":"Prog. Nat. Sci.: Mater. Int."},{"key":"2023061715390025100_c26","doi-asserted-by":"publisher","first-page":"152903","DOI":"10.1063\/1.4824214","volume":"103","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c27","doi-asserted-by":"publisher","first-page":"242105","DOI":"10.1063\/1.4937801","volume":"107","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c28","doi-asserted-by":"publisher","first-page":"064103","DOI":"10.1063\/1.5037999","volume":"124","year":"2018","journal-title":"J. Appl. Phys."},{"key":"2023061715390025100_c29","doi-asserted-by":"publisher","first-page":"32","DOI":"10.3390\/ma11010032","volume":"11","year":"2018","journal-title":"Materials"},{"key":"2023061715390025100_c30","doi-asserted-by":"publisher","first-page":"072102","DOI":"10.1063\/1.4893568","volume":"105","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"2023061715390025100_c31","doi-asserted-by":"publisher","first-page":"11920","DOI":"10.1039\/C7NR02215H","volume":"9","year":"2017","journal-title":"Nanoscale"},{"key":"2023061715390025100_c32","doi-asserted-by":"publisher","first-page":"134102","DOI":"10.1063\/1.5015985","volume":"123","year":"2018","journal-title":"J. Appl. Phys."},{"key":"2023061715390025100_c33","doi-asserted-by":"publisher","first-page":"104103","DOI":"10.1103\/PhysRevB.75.104103","volume":"75","year":"2007","journal-title":"Phys. Rev. B"},{"key":"2023061715390025100_c34","doi-asserted-by":"publisher","first-page":"014020","DOI":"10.1103\/PhysRevApplied.7.014020","volume":"7","year":"2017","journal-title":"Phys. Rev. Appl."},{"key":"2023061715390025100_c35","doi-asserted-by":"publisher","first-page":"3962","DOI":"10.1002\/adfm.201400110","volume":"24","year":"2014","journal-title":"Adv. Funct. Mater."},{"key":"2023061715390025100_c36","doi-asserted-by":"publisher","first-page":"165139","DOI":"10.1103\/PhysRevB.88.165139","volume":"88","year":"2013","journal-title":"Phys. Rev. B"}],"container-title":["Applied Physics Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.5047853\/14517913\/102904_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.5047853\/14517913\/102904_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,17]],"date-time":"2023-06-17T15:39:07Z","timestamp":1687016347000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/apl\/article\/113\/10\/102904\/35813\/Impact-of-the-ferroelectric-layer-thickness-on-the"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,9,3]]},"references-count":36,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2018,9,3]]}},"URL":"https:\/\/doi.org\/10.1063\/1.5047853","relation":{},"ISSN":["0003-6951","1077-3118"],"issn-type":[{"type":"print","value":"0003-6951"},{"type":"electronic","value":"1077-3118"}],"subject":[],"published-other":{"date-parts":[[2018,9,3]]},"published":{"date-parts":[[2018,9,3]]},"article-number":"102904"}}