{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,2]],"date-time":"2025-12-02T18:38:28Z","timestamp":1764700708020,"version":"3.41.2"},"reference-count":49,"publisher":"AIP Publishing","issue":"24","funder":[{"DOI":"10.13039\/100004415","name":"North Atlantic Treaty Organization","doi-asserted-by":"publisher","award":["985215"],"award-info":[{"award-number":["985215"]}],"id":[{"id":"10.13039\/100004415","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100008530","name":"European Regional Development Fund","doi-asserted-by":"publisher","award":["KK.01.1.1.01.0001"],"award-info":[{"award-number":["KK.01.1.1.01.0001"]}],"id":[{"id":"10.13039\/501100008530","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Engineering and Physical Sciences Research Council","doi-asserted-by":"publisher","award":["EP\/P015581\/1"],"award-info":[{"award-number":["EP\/P015581\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["UID\/CTM\/50025\/2013"],"award-info":[{"award-number":["UID\/CTM\/50025\/2013"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2018,12,28]]},"abstract":"<jats:p>We provide direct evidence that the broad Z1\/2 peak, commonly observed by conventional deep level transient spectroscopy in as-grown and at high concentrations in radiation damaged 4H-SiC, has two components, namely, Z1 and Z2, with activation energies for electron emissions of 0.59 and 0.67\u2009eV, respectively. We assign these components to Z1\/2=\u2192Z1\/2\u2212+e\u2212\u2192Z1\/20+2e\u2212 transition sequences from negative-U ordered acceptor levels of carbon vacancy (VC) defects at hexagonal\/pseudo-cubic sites, respectively. By employing short filling pulses at lower temperatures, we were able to characterize the first acceptor level of VC on both sub-lattice sites. Activation energies for electron emission of 0.48 and 0.41\u2009eV were determined for Z1(\u2212\/0) and Z2(\u2212\/0) transitions, respectively. Based on trap filling kinetics and capture barrier calculations, we investigated the two-step transitions from neutral to doubly negatively charged Z1 and Z2. Positions of the first and second acceptor levels of VC at both lattice sites, as well as (=\/0) occupancy levels, were derived from the analysis of the emission and capture data.<\/jats:p>","DOI":"10.1063\/1.5063773","type":"journal-article","created":{"date-parts":[[2018,12,26]],"date-time":"2018-12-26T19:40:11Z","timestamp":1545853211000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":31,"title":["Acceptor levels of the carbon vacancy in 4<i>H<\/i>-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling"],"prefix":"10.1063","volume":"124","author":[{"given":"Ivana","family":"Capan","sequence":"first","affiliation":[{"name":"Division of Materials Physics, Ruder Bo\u0161kovi\u0107 Institute 1 , Bijeni\u0107ka 54, 10 000 Zagreb, Croatia"}]},{"given":"Tomislav","family":"Brodar","sequence":"additional","affiliation":[{"name":"Division of Materials Physics, Ruder Bo\u0161kovi\u0107 Institute 1 , Bijeni\u0107ka 54, 10 000 Zagreb, Croatia"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0280-366X","authenticated-orcid":false,"given":"Jos\u00e9","family":"Coutinho","sequence":"additional","affiliation":[{"name":"Department of Physics and I3N, University of Aveiro 2 , Campus Santiago, 3810-193 Aveiro, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7850-3164","authenticated-orcid":false,"given":"Takeshi","family":"Ohshima","sequence":"additional","affiliation":[{"name":"Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology 3 , 1233 Watanuki, Takasaki, Gunma 370-1292, Japan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2503-6144","authenticated-orcid":false,"given":"Vladimir P.","family":"Markevich","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering and Photon Science Institute, University of Manchester 4 , Manchester M13 9PL, United Kingdom"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7667-4624","authenticated-orcid":false,"given":"Anthony R.","family":"Peaker","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering and Photon Science Institute, University of Manchester 4 , Manchester M13 9PL, United Kingdom"}]}],"member":"317","published-online":{"date-parts":[[2018,12,26]]},"reference":[{"key":"2023080807221276000_c1","doi-asserted-by":"publisher","first-page":"040103","DOI":"10.7567\/jjap.54.040103","volume":"54","year":"2015","journal-title":"Jpn. 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