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In the sample implanted at room temperature to a fluence of 4\u2009\u00d7\u20091012\u2009cm\u22122, 60(9)% of the In atoms were found slightly displaced (0.12\u20130.20\u2009\u00c5) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800\u2009\u00b0C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond.<\/jats:p>","DOI":"10.1063\/1.5097032","type":"journal-article","created":{"date-parts":[[2019,6,5]],"date-time":"2019-06-05T19:51:07Z","timestamp":1559764267000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":1,"title":["Lattice location study of low-fluence ion-implanted 124In in 3C-SiC"],"prefix":"10.1063","volume":"125","author":[{"given":"A. R. 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