{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T22:38:53Z","timestamp":1775083133912,"version":"3.50.1"},"reference-count":65,"publisher":"AIP Publishing","issue":"12","funder":[{"DOI":"10.13039\/100004415","name":"North Atlantic Treaty Organization","doi-asserted-by":"publisher","award":["G5674"],"award-info":[{"award-number":["G5674"]}],"id":[{"id":"10.13039\/100004415","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["UIDB\/50025\/2020"],"award-info":[{"award-number":["UIDB\/50025\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["UIDP\/50025\/2020"],"award-info":[{"award-number":["UIDP\/50025\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["CPCA\/A0\/7277\/2020"],"award-info":[{"award-number":["CPCA\/A0\/7277\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"name":"I3N","award":["BPD-11(5017\/2018)"],"award-info":[{"award-number":["BPD-11(5017\/2018)"]}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2021,9,28]]},"abstract":"<jats:p>We report on a bistable defect known as M-center, here introduced in n-type 4H-SiC by 2\u2009MeV He ion implantation. Deep levels of the M-center are investigated by means of junction spectroscopy techniques, namely, deep level transient spectroscopy (DLTS) and isothermal DLTS. In addition to previously reported three deep levels arising from the M-center (labeled as M1, M2, and M3), we provide direct evidence on the existence of a fourth transition (labeled as M4) with an activation energy of 0.86\u2009eV. Activation energies and apparent capture cross sections for all four metastable defects are determined. From first-principles calculations, it is shown that the observed features of the M-center, including the charge state character, transition levels, bi-stability dynamics, and annealing, are all accounted for by a carbon self-interstitial.<\/jats:p>","DOI":"10.1063\/5.0064958","type":"journal-article","created":{"date-parts":[[2021,9,28]],"date-time":"2021-09-28T09:56:24Z","timestamp":1632822984000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":16,"title":["M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies"],"prefix":"10.1063","volume":"130","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8550-6451","authenticated-orcid":false,"given":"I.","family":"Capan","sequence":"first","affiliation":[{"name":"Rudjer Bo\u0161kovi\u0107 Institute 1 , Bijeni\u010dka 54, 10000 Zagreb, Croatia"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6459-0260","authenticated-orcid":false,"given":"T.","family":"Brodar","sequence":"additional","affiliation":[{"name":"Rudjer Bo\u0161kovi\u0107 Institute 1 , Bijeni\u010dka 54, 10000 Zagreb, Croatia"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1191-978X","authenticated-orcid":false,"given":"R.","family":"Bernat","sequence":"additional","affiliation":[{"name":"Rudjer Bo\u0161kovi\u0107 Institute 1 , Bijeni\u010dka 54, 10000 Zagreb, Croatia"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9433-6597","authenticated-orcid":false,"given":"\u017d.","family":"Pastuovi\u0107","sequence":"additional","affiliation":[{"name":"Australian Nuclear Science and Technology Organisation 2 , 1 New Illawarra Rd., Lucas Heights, NSW 2234, Australia"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3371-4144","authenticated-orcid":false,"given":"T.","family":"Makino","sequence":"additional","affiliation":[{"name":"National Institutes for Quantum and Radiological Science and Technology 3 , 1233 Watanuki, Takasaki, Gunma 370-1292, Japan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7850-3164","authenticated-orcid":false,"given":"T.","family":"Ohshima","sequence":"additional","affiliation":[{"name":"National Institutes for Quantum and Radiological Science and Technology 3 , 1233 Watanuki, Takasaki, Gunma 370-1292, Japan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5099-7772","authenticated-orcid":false,"given":"J. D.","family":"Gouveia","sequence":"additional","affiliation":[{"name":"I3N, Department of Physics, University of Aveiro 4 , Campus Santiago, 3810-193 Aveiro, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0280-366X","authenticated-orcid":false,"given":"J.","family":"Coutinho","sequence":"additional","affiliation":[{"name":"I3N, Department of Physics, University of Aveiro 4 , Campus Santiago, 3810-193 Aveiro, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2021,9,28]]},"reference":[{"key":"2023063016272196300_c1","volume-title":"Fundamentals of Silicon Carbide Technology","year":"2014"},{"key":"2023063016272196300_c2","doi-asserted-by":"publisher","first-page":"8193","DOI":"10.1109\/TIE.2017.2652401","volume":"64","year":"2017","journal-title":"IEEE Trans. Ind. Electron."},{"key":"2023063016272196300_c3","doi-asserted-by":"publisher","first-page":"13376","DOI":"10.1038\/s41598-017-13715-3","volume":"7","year":"2017","journal-title":"Sci. Rep."},{"key":"2023063016272196300_c4","volume-title":"Properties and Applications of Silicon Carbide","year":"2011"},{"key":"2023063016272196300_c5","doi-asserted-by":"publisher","first-page":"164793","DOI":"10.1016\/j.nima.2020.164793","volume":"986","year":"2021","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"2023063016272196300_c6","doi-asserted-by":"publisher","first-page":"8513","DOI":"10.1073\/pnas.1003052107","volume":"107","year":"2010","journal-title":"Proc. Natl. Acad. Sci. U.S.A."},{"key":"2023063016272196300_c7","doi-asserted-by":"publisher","first-page":"84","DOI":"10.1038\/nature10562","volume":"479","year":"2011","journal-title":"Nature"},{"key":"2023063016272196300_c8","doi-asserted-by":"publisher","first-page":"5607","DOI":"10.1038\/s41467-019-13495-6","volume":"10","year":"2019","journal-title":"Nat. Commun."},{"key":"2023063016272196300_c9","doi-asserted-by":"publisher","first-page":"022001","DOI":"10.1088\/2515-7647\/ab77a2","volume":"2","year":"2020","journal-title":"J. Phys. Photonics"},{"key":"2023063016272196300_c10","doi-asserted-by":"publisher","first-page":"187603","DOI":"10.1103\/PhysRevLett.109.187603","volume":"109","year":"2012","journal-title":"Phys. Rev. Lett."},{"key":"2023063016272196300_c11","first-page":"195501","volume":"31","year":"2019","journal-title":"J. Phys.: Condens. Matter"},{"key":"2023063016272196300_c12","doi-asserted-by":"publisher","first-page":"R10119","DOI":"10.1103\/PhysRevB.58.R10119","volume":"58","year":"1998","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c13","doi-asserted-by":"publisher","first-page":"161597","DOI":"10.1063\/1.5011124","volume":"123","year":"2018","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c14","doi-asserted-by":"publisher","first-page":"245701","DOI":"10.1063\/1.5063773","volume":"124","year":"2018","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c15","doi-asserted-by":"publisher","first-page":"111","DOI":"10.1038\/s41534-019-0227-y","volume":"5","year":"2019","journal-title":"NPJ Quantum Inf."},{"key":"2023063016272196300_c16","doi-asserted-by":"publisher","first-page":"16555","DOI":"10.1103\/PhysRevB.62.16555","volume":"62","year":"2000","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c17","doi-asserted-by":"publisher","first-page":"4354","DOI":"10.1016\/j.physb.2009.09.023","volume":"404","year":"2009","journal-title":"Phys. B: Condens. Matter"},{"key":"2023063016272196300_c18","doi-asserted-by":"publisher","first-page":"235209","DOI":"10.1103\/PhysRevB.88.235209","volume":"88","year":"2013","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c19","doi-asserted-by":"publisher","first-page":"174105","DOI":"10.1103\/PhysRevB.96.174105","volume":"96","year":"2017","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c20","doi-asserted-by":"publisher","first-page":"104103","DOI":"10.1103\/PhysRevB.98.104103","volume":"98","year":"2018","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c21","doi-asserted-by":"publisher","first-page":"054017","DOI":"10.1103\/PhysRevApplied.13.054017","volume":"13","year":"2020","journal-title":"Phys. Rev. Appl."},{"key":"2023063016272196300_c22","doi-asserted-by":"publisher","first-page":"161114","DOI":"10.1103\/PhysRevB.96.161114","volume":"96","year":"2017","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c23","doi-asserted-by":"publisher","first-page":"2833","DOI":"10.1063\/1.114800","volume":"67","year":"1995","journal-title":"Appl. Phys. Lett."},{"key":"2023063016272196300_c24","doi-asserted-by":"publisher","first-page":"6155","DOI":"10.1063\/1.364397","volume":"81","year":"1997","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c25","doi-asserted-by":"publisher","first-page":"041101","DOI":"10.1143\/APEX.2.041101","volume":"2","year":"2009","journal-title":"Appl. Phys. Express"},{"key":"2023063016272196300_c26","doi-asserted-by":"publisher","first-page":"052108","DOI":"10.1063\/1.3531755","volume":"98","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"2023063016272196300_c27","doi-asserted-by":"publisher","first-page":"499","DOI":"10.4028\/www.scientific.net\/MSF.353-356.499","volume":"353\u2013356","year":"2001","journal-title":"Mater. Sci. Forum"},{"key":"2023063016272196300_c28","doi-asserted-by":"publisher","first-page":"12433","DOI":"10.1088\/0953-8984\/14\/47\/316","volume":"14","year":"2002","journal-title":"J. Phys.: Condens. Matter"},{"key":"2023063016272196300_c29","doi-asserted-by":"publisher","first-page":"175","DOI":"10.1016\/j.physb.2003.09.043","volume":"340\u2013342","year":"2003","journal-title":"Phys. B: Condens. Matter"},{"key":"2023063016272196300_c30","doi-asserted-by":"publisher","first-page":"193102","DOI":"10.1103\/PhysRevB.67.193102","volume":"67","year":"2003","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c31","doi-asserted-by":"publisher","first-page":"1704","DOI":"10.1063\/1.1651656","volume":"84","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023063016272196300_c32","doi-asserted-by":"publisher","first-page":"085208","DOI":"10.1103\/PhysRevB.72.085208","volume":"72","year":"2005","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c33","doi-asserted-by":"publisher","first-page":"103703","DOI":"10.1063\/1.3586042","volume":"109","year":"2011","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c34","doi-asserted-by":"publisher","first-page":"465703","DOI":"10.1088\/1361-648X\/abaeaf","volume":"32","year":"2020","journal-title":"J. Phys.: Condens. Matter"},{"key":"2023063016272196300_c35","doi-asserted-by":"publisher","first-page":"845","DOI":"10.3390\/cryst10090845","volume":"10","year":"2020","journal-title":"Crystals"},{"key":"2023063016272196300_c36","doi-asserted-by":"publisher","first-page":"125201","DOI":"10.1103\/PhysRevB.68.125201","volume":"68","year":"2003","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c37","doi-asserted-by":"publisher","first-page":"205201","DOI":"10.1103\/PhysRevB.68.205201","volume":"68","year":"2003","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c38","doi-asserted-by":"publisher","first-page":"043518","DOI":"10.1063\/1.2009816","volume":"98","year":"2005","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c39","doi-asserted-by":"publisher","first-page":"4728","DOI":"10.1063\/1.1689731","volume":"95","year":"2004","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c40","doi-asserted-by":"publisher","first-page":"012005","DOI":"10.1063\/1.4837996","volume":"115","year":"2014","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c41","doi-asserted-by":"publisher","first-page":"4909","DOI":"10.1063\/1.1778819","volume":"96","year":"2004","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c42","doi-asserted-by":"publisher","first-page":"184111","DOI":"10.1103\/PhysRevB.102.184111","volume":"102","year":"2020","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c43","doi-asserted-by":"publisher","first-page":"145501","DOI":"10.1103\/PhysRevLett.96.145501","volume":"96","year":"2006","journal-title":"Phys. Rev. Lett."},{"key":"2023063016272196300_c44","doi-asserted-by":"publisher","first-page":"245202","DOI":"10.1103\/PhysRevB.80.245202","volume":"80","year":"2009","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c45","doi-asserted-by":"publisher","first-page":"212105","DOI":"10.1063\/1.5098070","volume":"114","year":"2019","journal-title":"Appl. Phys. Lett."},{"key":"2023063016272196300_c46","doi-asserted-by":"publisher","first-page":"121201","DOI":"10.1103\/PhysRevB.91.121201","volume":"91","year":"2015","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c47","doi-asserted-by":"publisher","first-page":"167","DOI":"10.3390\/cryst11020167","volume":"11","year":"2021","journal-title":"Crystals"},{"key":"2023063016272196300_c48","doi-asserted-by":"publisher","first-page":"225","DOI":"10.4028\/www.scientific.net\/MSF.679-680.225","volume":"679\u2013680","year":"2011","journal-title":"Mater. Sci. Forum"},{"key":"2023063016272196300_c49","doi-asserted-by":"publisher","first-page":"L180102","DOI":"10.1103\/PhysRevB.103.L180102","volume":"103","year":"2021","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c50","doi-asserted-by":"publisher","first-page":"015001","DOI":"10.1143\/APEX.1.015001","volume":"1","year":"2008","journal-title":"Appl. Phys. Express"},{"key":"2023063016272196300_c51","doi-asserted-by":"publisher","first-page":"475701","DOI":"10.1088\/1361-648X\/aa908c","volume":"29","year":"2017","journal-title":"J. Phys.: Condens. Matter"},{"key":"2023063016272196300_c52","doi-asserted-by":"publisher","first-page":"023704","DOI":"10.1063\/1.2216430","volume":"100","year":"2006","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c53","doi-asserted-by":"publisher","first-page":"15","DOI":"10.1016\/0927-0256(96)00008-0","volume":"6","year":"1996","journal-title":"Comput. Mater. Sci."},{"key":"2023063016272196300_c54","doi-asserted-by":"publisher","first-page":"8207","DOI":"10.1063\/1.1564060","volume":"118","year":"2003","journal-title":"J. Chem. Phys."},{"key":"2023063016272196300_c55","doi-asserted-by":"publisher","first-page":"219906","DOI":"10.1063\/1.2204597","volume":"124","year":"2006","journal-title":"J. Chem. Phys."},{"key":"2023063016272196300_c56","doi-asserted-by":"publisher","first-page":"17953","DOI":"10.1103\/PhysRevB.50.17953","volume":"50","year":"1994","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c57","doi-asserted-by":"publisher","first-page":"1758","DOI":"10.1103\/PhysRevB.59.1758","volume":"59","year":"1999","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c58","doi-asserted-by":"publisher","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","volume":"77","year":"1996","journal-title":"Phys. Rev. Lett."},{"key":"2023063016272196300_c59","doi-asserted-by":"publisher","first-page":"014103","DOI":"10.1103\/PhysRevB.100.014103","volume":"100","year":"2019","journal-title":"Phys. Rev. B"},{"key":"2023063016272196300_c60","doi-asserted-by":"publisher","first-page":"016402","DOI":"10.1103\/PhysRevLett.102.016402","volume":"102","year":"2009","journal-title":"Phys. Rev. Lett."},{"key":"2023063016272196300_c61","doi-asserted-by":"publisher","first-page":"9901","DOI":"10.1063\/1.1329672","volume":"113","year":"2000","journal-title":"J. Chem. Phys."},{"key":"2023063016272196300_c62","doi-asserted-by":"publisher","first-page":"309","DOI":"10.1143\/JJAP.18.309","volume":"18","year":"1979","journal-title":"Jpn. J. Appl. Phys."},{"key":"2023063016272196300_c63","doi-asserted-by":"publisher","first-page":"1809","DOI":"10.1063\/1.330683","volume":"53","year":"1982","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c64","doi-asserted-by":"publisher","first-page":"3644","DOI":"10.1063\/1.332914","volume":"55","year":"1984","journal-title":"J. Appl. Phys."},{"key":"2023063016272196300_c65","doi-asserted-by":"publisher","first-page":"3863","DOI":"10.1103\/PhysRevB.61.3863","volume":"61","year":"2000","journal-title":"Phys. Rev. B"}],"container-title":["Journal of Applied Physics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/5.0064958\/13257684\/125703_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/5.0064958\/13257684\/125703_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,30]],"date-time":"2023-06-30T17:04:47Z","timestamp":1688144687000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/jap\/article\/130\/12\/125703\/280865\/M-center-in-4H-SiC-Isothermal-DLTS-and-first"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,9,28]]},"references-count":65,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2021,9,28]]}},"URL":"https:\/\/doi.org\/10.1063\/5.0064958","relation":{},"ISSN":["0021-8979","1089-7550"],"issn-type":[{"value":"0021-8979","type":"print"},{"value":"1089-7550","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2021,9,28]]},"published":{"date-parts":[[2021,9,28]]},"article-number":"125703"}}