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The 2DEG sheet density Ns=(7.3\u00b10.7)\u00d71012 cm\u22122, sheet mobility \u03bcs=(270\u00b140) cm2\/(Vs), sheet resistance Rs=(3200\u00b1500)\u2008\u03a9\/\u25fb, and effective mass meff=(0.63\u00b10.04)m0 at low temperatures (T=5\u2009K) are determined by terahertz (THz) optical Hall effect measurements. The experimental 2DEG mobility in the channel is found within the expected range, and the sheet carrier density is in good agreement with self-consistent Poisson\u2013Schr\u00f6dinger calculations. However, a significant increase in the effective mass of 2DEG electrons at low temperatures is found in comparison with the respective value in bulk Al0.78Ga22N (meff=0.334\u2009m0). Possible mechanisms for the enhanced 2DEG effective mass parameter are discussed and quantified using self-consistent Poisson\u2013Schr\u00f6dinger calculations.<\/jats:p>","DOI":"10.1063\/5.0087033","type":"journal-article","created":{"date-parts":[[2022,6,24]],"date-time":"2022-06-24T10:55:32Z","timestamp":1656068132000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":7,"title":["Enhancement of 2DEG effective mass in AlN\/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect"],"prefix":"10.1063","volume":"120","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8827-7404","authenticated-orcid":false,"given":"Philipp","family":"K\u00fchne","sequence":"first","affiliation":[{"name":"Terahertz Materials Analysis Center (TheMAC), Link\u00f6ping University 1 , 581 83 Link\u00f6ping, Sweden"},{"name":"Center for III-Nitride Technology, C3NiT\u2014Janz\u00e9n, Link\u00f6ping 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