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Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the different states of IGZO-based devices. In this article, we demonstrate that resistive switching occurs due to the modulation of the Schottky barrier present at the bottom interface of the device. Furthermore, thermionic field emission and field emission regimes are identified as the dominant conduction mechanisms at the high resistive state of the device, while the bulk-limited ohmic conduction is found at the low resistive state. Due to the high complexity associated with creating compact models of resistive switching, a data-driven model is drafted taking systematic steps.<\/jats:p>","DOI":"10.1063\/5.0098145","type":"journal-article","created":{"date-parts":[[2022,8,17]],"date-time":"2022-08-17T14:51:40Z","timestamp":1660747900000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":7,"title":["Characterization and modeling of resistive switching phenomena in IGZO devices"],"prefix":"10.1063","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3918-8955","authenticated-orcid":false,"given":"G.","family":"Carvalho","sequence":"first","affiliation":[{"name":"INESC-TEC and Faculdade de Engenharia da Universidade do Porto, FEUP 1 , 4200-465 Porto, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2833-2942","authenticated-orcid":false,"given":"M. E.","family":"Pereira","sequence":"additional","affiliation":[{"name":"CENIMAT\/i3N, Departamento de Ci\u00eancias dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade NOVA de Lisboa and CEMOP\/UNINOVA 2 , Almada, 2825-097 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9645-1142","authenticated-orcid":false,"given":"C.","family":"Silva","sequence":"additional","affiliation":[{"name":"CENIMAT\/i3N, Departamento de Ci\u00eancias dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade NOVA de Lisboa and CEMOP\/UNINOVA 2 , Almada, 2825-097 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2764-3124","authenticated-orcid":false,"given":"J.","family":"Deuermeier","sequence":"additional","affiliation":[{"name":"CENIMAT\/i3N, Departamento de Ci\u00eancias dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade NOVA de Lisboa and CEMOP\/UNINOVA 2 , Almada, 2825-097 Caparica, Portugal"}]},{"given":"A.","family":"Kiazadeh","sequence":"additional","affiliation":[{"name":"CENIMAT\/i3N, Departamento de Ci\u00eancias dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade NOVA de Lisboa and CEMOP\/UNINOVA 2 , Almada, 2825-097 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7567-0792","authenticated-orcid":false,"given":"V.","family":"Tavares","sequence":"additional","affiliation":[{"name":"INESC-TEC and Faculdade de Engenharia da Universidade do Porto, FEUP 1 , 4200-465 Porto, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2022,8,17]]},"reference":[{"key":"2023080906452734200_c1","doi-asserted-by":"publisher","first-page":"254027","DOI":"10.1088\/0957-4484\/22\/25\/254027","article-title":"Scaling limits of resistive memories","volume":"22","year":"2011","journal-title":"Nanotechnology"},{"key":"2023080906452734200_c2","first-page":"6","article-title":"Ultrathin (\u223c2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration","year":"2014"},{"key":"2023080906452734200_c3","first-page":"2","article-title":"Integrated HfO 2-RRAM to achieve highly reliable, greener, faster, cost-effective, and scaled devices","year":"2017"},{"key":"2023080906452734200_c4","doi-asserted-by":"publisher","first-page":"56","DOI":"10.1186\/s11671-017-1831-4","article-title":"Three-dimensional integrated circuit (3D IC) key technology: Through-silicon via (TSV)","volume":"12","year":"2017","journal-title":"Nanoscale Res. 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